High-peak-power low-threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration-enhanced molecular beam epitaxy

We first report on migration-enhanced molecular beam epitaxial (MEMBE) growth and characterization of the GaAs layer on Si substrates (GaAs/Si). Excellent surface morphology GaAs layers were successfully grown on (100)Si substrates misoriented 4° toward the [110] direction. The MEMBE growth method is described, and material properties are compared with those of normal two-step MBE-grown or in situ annealed layers. Micrographs of cross-section view transmission electron microscopy (TEM) and scanning surface electron microscopy (SEM) of MEMBE-grown GaAs/Si showed dislocation densities of 1×107 cm−2, over ten times lower than those of normal two-step MBE-grown or in situ annealed layers. AlGaAs/GaAs double heterostructures have been successfully grown on MEMBE GaAs/Si by both metalorganic chemical vapor deposition and liquid phase epitaxy.

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Growth and characterization of GaAs layers on Si substrates by migration-enhanced molecular beam epitaxy

Kim¹,

Liu

Radhakrishnan

et al. 1988

Applied Physics Letters

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Improvement in the crystalline quality of heteroepitaxial GaAs on Si films grown by modulated molecular beam epitaxy

Lee

Liu

Wang

et al. 1989

Applied Physics Letters

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GaAs films were grown on Si substrates by a two-step method in which a thin buffer layer was first deposited using a modulated molecular beam epitaxy (MBE) technique followed by a thick layer grown by conventional molecular beam epitaxy. The film quality was evaluated using 77 K photoluminescence (PL) and double-crystal x-ray rocking curves. It was found that GaAs films grown in this way have a superior crystalline quality compared to the films prepared by normal two-step MBE. To investigate the nucleation of this buffer layer, thin GaAs layers (150 Å) were grown on Si substrates and examined by plan-view and cross-sectional transmission electron microscope. A thin, two-dimensional nucleation pattern was found in this sample, in clear contrast to the three-dimensional nucleation islands found in samples grown by conventional MBE. This showed conclusively that modulated beam molecular beam epitaxy resulted in a more uniform and two-dimensional nucleation during the initial stage of the growth as speculated earlier and is believed to be the reason for the improvement of the crystalline quality of the overgrown layer.

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High-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well lasers on Si substrates

Kim

Lang

Radhakrishnan

et al. 1989

Applied Physics Letters

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A high-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well laser on Si substrates has been demonstrated for the first time by a hybrid growth of migration-enhanced molecular beam epitaxy followed by metalorganic vapor phase epitaxy. The quantum well laser showed an output power of more than 400 mW per facet under pulsed conditions. A room-temperature threshold current of 300 mA was obtained with a differential quantum efficiency of 40% without facet coating. The threshold current density was 550 A/cm2 for a cavity length of 500 μm. These results show the highest peak power reported to date for low-threshold lasers on Si substrates. The full width at half maximum of the far-field pattern parallel to the junction was 6°. Threshold current densities as low as 250 A/cm2 were obtained for lasers on GaAs substrates.

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High-peak-power low-threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration-enhanced molecular beam epitaxy

Cited by 9 publications

References 8 publications

Growth and characterization of GaAs layers on Si substrates by migration-enhanced molecular beam epitaxy

Growth and characterization of GaAs layers on Si substrates by migration-enhanced molecular beam epitaxy

Improvement in the crystalline quality of heteroepitaxial GaAs on Si films grown by modulated molecular beam epitaxy

High-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well lasers on Si substrates

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