High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection

Lukman, Steven; Liu, Ding; Xu, Lei; Tao, Ye; Riis-Jensen, Anders C.; Zhang, Gang; Wu, Qing Yang Steve; Yang, Ming; Luo, Sheng; Hsu, Chuang‐Han; Yao, Liang-Zi; Liang, Gengchiau; Lin, Hsin; Zhang, Yong‐Wei; Thygesen, Kristian Sommer; Wang, Qi Jie; Feng, Yuanping; Teng, Jinghua

doi:10.1038/s41565-020-0717-2

Cited by 162 publications

(178 citation statements)

References 62 publications

Supporting

Mentioning

165

Contrasting

Order By: Relevance

“…[ 125 ] More recently, infrared photodetection enabled by interlayer excitons generated between WS 2 /HfS 2 has been reported, which provides a promising technology to realize room‐temperature infrared photodetectors. [ 126 ]…”

Section: Band Alignment Strategies and Mechanism In Photodetectorsmentioning

confidence: 99%

Band Alignment Engineering in Two‐Dimensional Transition Metal Dichalcogenide‐Based Heterostructures for Photodetectors

et al. 2020

View full text Add to dashboard Cite

The hybridization of two‐dimensional transition metal dichalcogenides (2D TMDs) with other light‐sensitive materials to fabricate the TMD‐based heterostructures is an effective way to boost the overall photoelectric performance of photodetectors. In particular, the alignment of band structure at the interface of the binding materials plays a critical role in optimizing the carrier transfer path and prompting the charge separation rate, which finally lead to the simultaneous improvement of photoresponsivity and response rate and the expansion of detection range. However, the band alignment engineering topic has been barely summarized and reviewed in detail up to today. Herein, a specific review focused on the band alignment strategies and the related charge‐transfer mechanism of the recently developed novel TMD heterostructures for photodetectors is provided. The band structures are classified into four categories according to the targeted function of photodetectors, including that formed by TMDs with zero‐bandgap materials, narrow‐bandgap semiconductors, middle‐bandgap semiconductors, and wide‐bandgap semiconductors. The corresponding band alignment principles and charge‐transfer behaviors are summarized carefully by providing various latest research works as representative examples under each category. Herein, a key reference for applying and extending the fundamental band alignment principles in the design and fabrication of future TMD‐based heterostructural photodetectors is provided.

show abstract

Section: Band Alignment Strategies and Mechanism In Photodetectorsmentioning

confidence: 99%

Band Alignment Engineering in Two‐Dimensional Transition Metal Dichalcogenide‐Based Heterostructures for Photodetectors

et al. 2020

View full text Add to dashboard Cite

show abstract

“…[ 49 ] (E), (F) A photodetector with WS 2 /HfS 2 heterostructure enabled by interlayer excitons and photoexcited carrier transfer process under light illumination. [ 50 ]…”

Section: D Materials Based Mid‐infrared Photodetectorsmentioning

confidence: 99%

“…A negative voltage applied to the drain relative to the source dissociates the ILEs and extracts free carriers under light illumination, resulting in a positive feedback and increased photocurrent, thus enabling high‐performance mid‐infrared photodetection with a tunable detection range, as illustrated in Figure 3E and 3F. [ 50 ] The strongly enhanced absorption of the ILEs in WS 2 /HfS 2 heterojunction boosts the responsivity to 9.5×10 2 AW –1 on laser illumination of 4.7 µm, which is comparable to those of Mo/W based photodiodes in near‐infrared range. The photoresponse can be further tuned and extended to 20 µm under a modest electric field, far beyond the cutoff wavelength of BP or b‐As x P 1‐x based heterostructures, providing a good platform for tunable room temperature infrared photodetector from the mid to long‐wave infrared spectrum.…”

Section: D Materials Based Mid‐infrared Photodetectorsmentioning

confidence: 99%

“…Figure 4B summarizes the typical responsivity and speed of different materials based photodetectors working in different wavelengths reported in literatures. [ 24,25,30,38,40,50,52,54,60,64–67,70,73,79–83 ] It can be concluded from the figure that it is still challenging to achieve both high photoresponsivity and fast photodetection in the device simultaneously. To enhance the overall device performance of 2D materials based photodetectors, researchers need to consider many factors including materials electronic bandgap, optical absorption ability, and band structure design that benefits both efficient and fast extraction of charge carriers.…”

Section: Challenge Of 2d Materials Based Mid‐infrared Photodetectorsmentioning

confidence: 99%

See 1 more Smart Citation

Research development of 2D materials based photodetectors towards mid‐infrared regime

Wang

Shu

et al. 2020

Nano Select

View full text Add to dashboard Cite

High performance mid‐infrared photodetectors play an irreplaceable role in optical communication, security monitoring, biological, and medical imaging and so on. Two‐dimensional (2D) materials have demonstrated great potential for infrared photodetection application. In recent years, the research on 2D materials based mid‐infrared photodetectors has underwent a fast growth. In this review, we summarize recent advances in the 2D materials based photodetectors, with an emphasis on mid‐infrared photodetection. In the first section, we start with a brief discussion on the potential advantages of 2D materials for mid‐infrared photodetection. Next, we focus on the development of 2D mid‐infrared photodetectors, and then discuss the challenges of this rapidly‐growing field. Following this, we review the solutions for improving the device performances and point out the issues remained to be solved. Finally, the future directions in this area are discussed and general advices are provided for the future development of high‐performance mid‐infrared photodetectors based on 2D materials.

show abstract

“…33 Stacking graphene with 2D semiconductors while using hexagonal boronitride (hBN) as a 2D insulator allows the development of all-2D transistors. 34,35 In recent years, light emitting devices (LEDs), 36,37 lasers, 38,39 photodetectors 40,41 and photovoltaic devices 42 based on 2D materials have been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Hybrid Plasmonics and Two-Dimensional Materials: Theory and Applications

Sebek

Elbana

Nemati

et al. 2020

J. Mol. Eng. Mater.

Self Cite

View full text Add to dashboard Cite

The inherent thinness of two-dimensional 2D materials limits their efficiency of light-matter interactions and the high loss of noble metal plasmonic nanostructures limits their applicability. Thus, a combination of 2D materials and plasmonics is highly attractive. This review describes the progress in the field of 2D plasmonics, which encompasses 2D plasmonic materials and hybrid plasmonic-2D materials structures. Novel plasmonic 2D materials, plasmon-exciton interaction within 2D materials and applications comprising sensors, photodetectors and, metasurfaces are discussed.

show abstract

High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection

Cited by 162 publications

References 62 publications

Band Alignment Engineering in Two‐Dimensional Transition Metal Dichalcogenide‐Based Heterostructures for Photodetectors

Band Alignment Engineering in Two‐Dimensional Transition Metal Dichalcogenide‐Based Heterostructures for Photodetectors

Research development of 2D materials based photodetectors towards mid‐infrared regime

Hybrid Plasmonics and Two-Dimensional Materials: Theory and Applications

Contact Info

Product

Resources

About