2017
DOI: 10.1038/s41598-017-09036-0
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High operating temperature in V-based superconducting quantum interference proximity transistors

Abstract: Here we report the fabrication and characterization of fully superconducting quantum interference proximity transistors (SQUIPTs) based on the implementation of vanadium (V) in the superconducting loop. At low temperature, the devices show high flux-to-voltage (up to 0.52 mV/Φ0) and flux-to-current (above 12 nA/Φ0) transfer functions, with the best estimated flux sensitivity ~ 2.6 μΦ0/(Hz)1/2 reached under fixed voltage bias, where Φ0 is the flux quantum. The interferometers operate up to T bath   2 K, with an… Show more

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Cited by 21 publications
(21 citation statements)
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“…Such a choice implies a different trade-off between the heat capacity (determined by volume and resistance) of the junction, the DOS gap giving the linear-response absorption threshold, and the kinetic inductance. We expect lithographic fabrication of both short [44] and long [17] junction devices is feasible.…”
Section: Discussionmentioning
confidence: 99%
“…Such a choice implies a different trade-off between the heat capacity (determined by volume and resistance) of the junction, the DOS gap giving the linear-response absorption threshold, and the kinetic inductance. We expect lithographic fabrication of both short [44] and long [17] junction devices is feasible.…”
Section: Discussionmentioning
confidence: 99%
“…Here, we take the electron density at the Fermi energy of aluminum to be N F = 2.15 × 10 47 J −1 m −3 [23][24][25]. Although the critical temperature of Ti Dayem bridges is similar to that of the Al, we point out that the Ti is not contributing to the observed effects.…”
Section: -2mentioning
confidence: 99%
“…Differently from short-junction SQUIPTs [13,15], the I(Φ) characteristic is not only Φ 0 -periodic, but it is also strongly hysteretic in Φ. This is highlighted in Fig.…”
Section: Resultsmentioning
confidence: 89%