High near-infrared transparent molybdenum-doped indium oxide thin films for nanocrystalline silicon solar cell applications

Parthiban, S.; Gokulakrishnan, V.; Ramamurthi, K.; Elangovan, E.; Martins, Rodrigo; Fortunato, Elvira; Ganesan, R.

doi:10.1016/j.solmat.2008.08.007

Cited by 82 publications

(28 citation statements)

References 27 publications

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“…The thin films of ITO have found many applications as liquid crystal displays [1], antistatic coatings [2], heat mirrors [3], solar cells [4], flat panel displays [5] and organic light emitting diodes (OLED) [6].…”

Section: Introductionmentioning

confidence: 99%

The effect of Ag intermediate layer on crystalline, optical and electrical properties of nano-structured thin film

et al. 2010

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ITO thin films and ITO/Ag/ITO multilayered films were prepared on glass substrate by reactive thermal evaporation technique without intentionally heating the substrate. After deposition the films were annealed in air at three different temperatures (300°C, 420°C and 540°C). The thickness of each layer in the ITO/Ag/ITO films was kept constant at 50 nm/10 nm/40 nm. The opto-electrical and structural properties of ITO/Ag/ITO multilayered films were compared with conventional ITO single-layer films. Although both films had identical thickness, 100 nm, the ITO/Ag/ITO films showed a lower resistivity. XRD spectra showed that Ag intermediate layer had a small effect on crystalline properties of ITO/Ag/ITO films.

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Section: Introductionmentioning

confidence: 99%

The effect of Ag intermediate layer on crystalline, optical and electrical properties of nano-structured thin film

et al. 2010

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“…An increase in the grain size leads to a decrease in the density of the grain boundaries. As a result, there is enhancement in the carrier concentration and the conductivity (Table 1) [19]. By further increase in the substrate temperature (550℃ to 600℃), the XRD spectrum exhibits better crystalline structure [20].…”

Section: Resultsmentioning

confidence: 98%

Characterization and Gas-sensing Performance of Spray Pyrolysed In₂O₃Thin Films: Substrate Temperature Effect

Bagheri¹,

Ziabari²,

Rozati³

et al. 2012

Transactions on Electrical and Electronic Materials

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Spray pyrolysis method was applied for the preparation of indium oxide (In 2 O 3 ) thin films, by varying the substrate temperature range from 400-600℃. All the samples were characterized at room temperature by using X-Ray diffraction, Scanning electron microscopy, Atomic Force Microscopy, Hall Effect and UV-Visible spectrophotometry. The optimal substrate temperature required for obtaining films of high crystallographic quality was 575℃. By comparing optical transmittance and electrical conductivity it was observed that the best figure of merit for these films was achieved for the same temperature and electrical resistivity was in the order of ρ=1.47×10 -1 [Ωcm]. Gas sensing measurements of the films in ethanol showed enhancement with surface roughness and sheet resistance.

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“…By increasing the substrate temperature, the grains start to grow and the surface covered fully with ne and large grains. Increase in grains size led to the decrease in the density of grain boundary, therefore the carrier concentration and the conductivity enhances (Table) [14]. By further increase in substrate temperature (550 • C to 600…”

Section: Methodsmentioning

confidence: 94%

“…• C, the grain size decreases from 36.02 nm to 33.55 nm, decrease of the grain size is accompanied with sheet resistance increment and leads to mobility decrease (Table) [14] . Results show that increase in substrate temperature highly aects the surface morphology of the lms, especially grains dimension throughout the lm.…”

Section: Methodsmentioning

confidence: 99%

Preparation, Study and Nanoscale Growth of Indium Oxide Thin Films

2012

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Indium oxide (In2O3) thin lms were deposited on glass substrate by varying substrate temperature in the range of 400600• C using the spray pyrolysis technique. In this research, physical properties of indium oxide thin lms were studied and then nanocrystalline sizes at dierent substrate temperature were deeply compared and investigated. All lms were characterized at room temperature using X-ray diraction, scanning electron microscopy, atomic force microscopy, photoluminescence, the Hall eect and UV-visible spectrophotometer. The optimal substrate temperature to obtain lms of high crystallographic quality was 575• C, for this temperature, the electrical resistivity was in the order of ρ = 0.147 Ω cm. For comparing optical transmittance and electrical conductivity the best gure of merit of the lms was achieved at 575•

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High near-infrared transparent molybdenum-doped indium oxide thin films for nanocrystalline silicon solar cell applications

Cited by 82 publications

References 27 publications

The effect of Ag intermediate layer on crystalline, optical and electrical properties of nano-structured thin film

The effect of Ag intermediate layer on crystalline, optical and electrical properties of nano-structured thin film

Characterization and Gas-sensing Performance of Spray Pyrolysed In₂O₃Thin Films: Substrate Temperature Effect

Preparation, Study and Nanoscale Growth of Indium Oxide Thin Films

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High near-infrared transparent molybdenum-doped indium oxide thin films for nanocrystalline silicon solar cell applications

Cited by 82 publications

References 27 publications

The effect of Ag intermediate layer on crystalline, optical and electrical properties of nano-structured thin film

The effect of Ag intermediate layer on crystalline, optical and electrical properties of nano-structured thin film

Characterization and Gas-sensing Performance of Spray Pyrolysed In2O3Thin Films: Substrate Temperature Effect

Preparation, Study and Nanoscale Growth of Indium Oxide Thin Films

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Characterization and Gas-sensing Performance of Spray Pyrolysed In₂O₃Thin Films: Substrate Temperature Effect