2007
DOI: 10.1063/1.2751103
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High mobility vanadyl-phthalocyanine polycrystalline films for organic field-effect transistors

Abstract: The organic films of vanadyl-phthalocyanine (VOPc) compounds showed weak epitaxy growth (WEG) behavior on thin ordered para-sexiphenyl (p-6P) layer with high substrate temperature. The WEG of VOPc molecules standing up on the p-6P layer leaded to high in-plane orientation and their layer-by-layer growth behavior. In consequence, high quality VOPc films were obtained, which were consisted of lamellar crystals. Organic field-effect transistors with VOPc∕p-6P films as active layers realized high mobility of above… Show more

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Cited by 113 publications
(102 citation statements)
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“…CuPc, CoPc, FePc, MnPc, NiPc, and ZnPc). Of these, copper phthalocyanine (CuPc, (55)) is one of the most widely used molecules for OFETs with a maximum field-effect mobility of 0.02 cm (57) 35 , and VOPc (58) 36 have been discovered to possess high p-type field-effect properties. In contrast, it should be noted that tin (IV) phthalocyanine oxide (SnOPc, (59)) was found to be an interesting air-stable n-type OFET material which contains no electron-withdrawing groups.…”
Section: Phthalocyanine Derivativesmentioning
confidence: 99%
“…CuPc, CoPc, FePc, MnPc, NiPc, and ZnPc). Of these, copper phthalocyanine (CuPc, (55)) is one of the most widely used molecules for OFETs with a maximum field-effect mobility of 0.02 cm (57) 35 , and VOPc (58) 36 have been discovered to possess high p-type field-effect properties. In contrast, it should be noted that tin (IV) phthalocyanine oxide (SnOPc, (59)) was found to be an interesting air-stable n-type OFET material which contains no electron-withdrawing groups.…”
Section: Phthalocyanine Derivativesmentioning
confidence: 99%
“…The average value of the mobility is roughly twice as high for the HT compared to the RT (0.27 ± 0.04 cm 2 V −1 s −1 for HT and 0.14 ± 0.08 cm 2 V −1 s −1 for RT) and is consistent with prior reports of high mobility in VOPc. [ 21,23 ] The average value of γ decreases from (−1.2 ± 0.2) × 10 −4 m 1/2 V −1/2 for RT to (−1.7 ± 0.1) × 10 −4 m 1/2 V −1/2 for the high temperature deposition, which suggests a decrease in trapping for the HT sample. The comparatively high mobility value for the HT sample is despite the VOPc being "stood up" relative to the graphene which should increase charge transport laterally through the fi lm (as in a OTFT measurement) rather than vertically through it as probed here.…”
Section: Correlating Crystallinity and Mobilitymentioning
confidence: 99%
“…Despite this, the VOPc island size seen here is still larger than that reported for VOPc deposited onto an orderinducing p-6P layer on silicon oxide. [ 21 ] This suggests that high quality OSC thin fi lm deposition can be achieved on graphene without the need for order-inducing layers.…”
Section: Controlling Vopc Grain Size With Elevated Substrate Temperatmentioning
confidence: 99%
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