1999
DOI: 10.1109/55.798048
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High-mobility poly-Si TFTs fabricated on flexible stainless-steel substrates

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Cited by 45 publications
(25 citation statements)
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“…All polysilicon TFT devices and circuits in this work [4][5][6][7] were fabricated on 150 mm flexible stainless style type 304 substrates that were 125 lm thick. The metal foil substrates were polished to a mirror finish with an average surface roughness of only 3 nm.…”
Section: Polysilicon Thin Film Transistormentioning
confidence: 99%
“…All polysilicon TFT devices and circuits in this work [4][5][6][7] were fabricated on 150 mm flexible stainless style type 304 substrates that were 125 lm thick. The metal foil substrates were polished to a mirror finish with an average surface roughness of only 3 nm.…”
Section: Polysilicon Thin Film Transistormentioning
confidence: 99%
“…[36][37][38] The best results to date correspond to n-channel mobility of up to 267 cm 2 /V s and p-channel mobility of 88 cm 2 /V s with a highest reported process temperature of 400°C. [36][37][38] The best results to date correspond to n-channel mobility of up to 267 cm 2 /V s and p-channel mobility of 88 cm 2 /V s with a highest reported process temperature of 400°C.…”
Section: Low-temperature Poly-si Thin-film Transistors and Circuits Omentioning
confidence: 99%
“…Several research groups have integrated TFT arrays on metal foil as display backplane [2,4,[5][6][7]. Serikawa et al have focused on the integration of poly Si TFT on stainless steel substrate [6], and Xie et al reported EL deposition on metal foil as test cell [7].…”
Section: Impactmentioning
confidence: 99%