High mobility p-channel HFETs using strained Sb-based materials

Abstract

Antimonide-based p-channel HFETs with a 0.25 mm gate length have been fabricated with an InAlSb=AlGaSb barrier and a strained In 0.41 Ga 0.59 Sb quantum well channel. The modulation-doped material exhibits a Hall mobility of 1020 cm 2 =V s and a sheet density of 1.6 Â 10 12 cm À2. The devices have a maximum DC transconductance of 133 mS=mm and an f T and f max of 15 and 27 GHz, respectively. These values are the highest reported to date for this material system.

Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors

“…For this work, we employ a similar strategy with the goal of demonstrating a narrow-bandgap channel material with relatively high hole mobility. Recently, we examined InGaSb as a channel material [10,11]. In the present work, we investigate GaSb as the channel material, with a potential advantage being the absence of alloy scattering in the channel.…”

Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits

“…We also investigated strained InGaSb channels on AlGaSb buffer layers and achieved Hall mobilities as high as 1500 cm 2 /V s [13]. With In 0.4 Ga 0.6 Sb as the channel in a p-FET, a maximum transconductance of 133 mS/mm was achieved [14]. For a 200 nm gate length, the cutoff frequency, f T , was 19 GHz, and the maximum oscillation frequency, f max , was 34 GHz [15].…”

Antimonide-Based Compound Semiconductors for Low-Power Electronics

“…1). In both systems, hole mobilities as high as 1500 cm 2 /V s were achieved at room temperature (a world record for any III-V compound), and p-channel FETs were demonstrated [8][9][10]. GaSb QWs on InP substrates reached record-low sheet resistivities of 1500 Ω/□ [11].…”