High-mobility metal-oxide thin-film transistors by spray deposition of environmentally friendly precursors

Oertel, Susanne; Jank, Michael P. M.; Teuber, Erik; Bauer, Anton J.; Frey, L.

doi:10.1016/j.tsf.2013.11.061

Cited by 14 publications

(7 citation statements)

References 18 publications

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“…All observed XPS peaks are in the range of what was found in previous XPS studies on ZnO. [14][15][16][17][18][19] Overall, XPS analysis shows the chemical identity of our films as wurtzite ZnO, with Zn-OH surface groups, thus confirming the successful conversion of the precursor for both casting solvents, but reveals no differences at the level of atomic binding between the different casting solvents.…”

Section: Resultssupporting

confidence: 80%

“…2 shows O 1s XPS spectra for precursorroute ZnO films cast from EtOH (top) and mixed solvent (bottom). For Zn 2p orbitals, we find the usual split into Zn 2p 1/2 Zn 2p 3/2 orbitals [15][16][17][18][19]. The (non-Gaussian) O 1s peaks in Fig.…”

Section: Resultsmentioning

confidence: 77%

“…For Zn 2p orbitals, we find the usual splitting into Zn 2p 1/2 Zn 2p 3/2 orbitals. [15][16][17][18][19] The (non-Gaussian) O 1s peaks in Fig. 2 have been resolved into a superposition of two overlapping Gaussians.…”

Section: Resultsmentioning

confidence: 99%

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Precursor-route ZnO films from a mixed casting solvent for high performance aqueous electrolyte-gated transistors

Althagafi

Algarni

Naim

et al. 2015

Phys. Chem. Chem. Phys.

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eprints@whiterose.ac.uk https://eprints.whiterose.ac.uk/ Reuse Unless indicated otherwise, fulltext items are protected by copyright with all rights reserved. The copyright exception in section 29 of the Copyright, Designs and Patents Act 1988 allows the making of a single copy solely for the purpose of non-commercial research or private study within the limits of fair dealing. The publisher or other rights-holder may allow further reproduction and re-use of this version -refer to the White Rose Research Online record for this item. Where records identify the publisher as the copyright holder, users can verify any specific terms of use on the publisher's website. TakedownIf you consider content in White Rose Research Online to be in breach of UK law, please notify us by emailing eprints@whiterose.ac.uk including the URL of the record and the reason for the withdrawal request. This is an Accepted Manuscript, which has been through the Royal Society of Chemistry peer review process and has been accepted for publication.Accepted Manuscripts are published online shortly after acceptance, before technical editing, formatting and proof reading. Using this free service, authors can make their results available to the community, in citable form, before we publish the edited article. We will replace this Accepted Manuscript with the edited and formatted Advance Article as soon as it is available. AbstractWe significantly improved the performance of precursor-route semiconducting zinc oxide (ZnO) films in electrolyte-gated thin film transistors (TFTs). We find that the organic precursor to ZnO, Zinc Acetate (ZnAc), dissolves more readily in a 1:1 mix of ethanol (EtOH) and acetone than in either pure EtOH, pure acetone, or pure isopropanol. XPS and SEM characterisation show improved morphology of ZnO films converted from mixed solvent cast ZnAc precursor compared to EtOH cast precursor. When gated with a biocompatible electrolyte, phosphate buffered saline (PBS), ZnO thin film transistors (TFTs) derived from mixed solvent cast ZnAc give 4 times larger field effect current than similar films derived from ZnAc cast from pure EtOH. Sheet resistance at V G = V D = 1V is 30 kΩ/!, lower than for any organic TFT, and lower than for any electrolyte-gated ZnO TFT reported to date.

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Section: Resultssupporting

confidence: 80%

Section: Resultsmentioning

confidence: 77%

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Precursor-route ZnO films from a mixed casting solvent for high performance aqueous electrolyte-gated transistors

Althagafi

Algarni

Naim

et al. 2015

Phys. Chem. Chem. Phys.

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“…To develop an eco‐friendly synthetic route, aqueous zinc hydroxo‐amine complex precursor was proposed to fabricate the channel layer of TFTs . However, these precursors are highly sensitive to potential of hydrogen (PH) value and the tendency to form ZnO nuclei leading to sedimentation is increased by utilizing ammonium hydroxide . In addition, time‐consuming and cumbersome processes for complex precipitation steps cause considerable deviation when preparing the precursor, which may induce variation in electrical performance of the metal oxide TFTs.…”

Section: Introductionmentioning

confidence: 99%

Low‐Temperature, Nontoxic Water‐Induced Metal‐Oxide Thin Films and Their Application in Thin‐Film Transistors

Liu

Zhu

et al. 2015

Adv Funct Materials

169

123

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Here, a simple, nontoxic, and inexpensive “water‐inducement” technique for the fabrication of oxide thin films at low annealing temperatures is reported. For water‐induced (WI) precursor solution, the solvent is composed of water without additional organic additives and catalysts. The thermogravimetric analysis indicates that the annealing temperature can be lowered by prolonging the annealing time. A systematic study is carried out to reveal the annealing condition dependence on the performance of the thin‐film transistors (TFTs). The WI indium‐zinc oxide (IZO) TFT integrated on SiO2 dielectric, annealed at 300 °C for 2 h, exhibits a saturation mobility of 3.35 cm2 V−1 s−1 and an on‐to‐off current ratio of ≈108. Interestingly, through prolonging the annealing time to 4 h, the electrical parameters of IZO TFTs annealed at 230 °C are comparable with the TFTs annealed at 300 °C. Finally, fully WI IZO TFT based on YOx dielectric is integrated and investigated. This TFT device can be regarded as “green electronics” in a true sense, because no organic‐related additives are used during the whole device fabrication process. The as‐fabricated IZO/YOx TFT exhibits excellent electron transport characteristics with low operating voltage (≈1.5 V), small subthreshold swing voltage of 65 mV dec−1 and the mobility in excess of 25 cm2 V−1 s−1.

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“…Nevertheless, those high‐performance metal oxide‐based TFTs are usually manufactured using costly vacuum‐based techniques . To address this problem, recent research has been focused on the development of TFTs using alternative deposition methods based on solution‐processed oxide semiconductors …”

Section: Introductionmentioning

confidence: 99%

High‐Mobility ZnO Thin Film Transistors Based on Solution‐processed Hafnium Oxide Gate Dielectrics

Esro

Vourlias

Somerton

et al. 2014

Adv Funct Materials

159

115

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The properties of metal oxides with high dielectric constant (k) are being extensively studied for use as gate dielectric alternatives to silicon dioxide (SiO2). Despite their attractive properties, these high‐k dielectrics are usually manufactured using costly vacuum‐based techniques. In that respect, recent research has been focused on the development of alternative deposition methods based on solution‐processable metal oxides. Here, the application of the spray pyrolysis (SP) technique for processing high‐quality hafnium oxide (HfO2) gate dielectrics and their implementation in thin film transistors employing spray‐coated zinc oxide (ZnO) semiconducting channels are reported. The films are studied by means of admittance spectroscopy, atomic force microscopy, X‐ray diffraction, UV–Visible absorption spectroscopy, FTIR, spectroscopic ellipsometry, and field‐effect measurements. Analyses reveal polycrystalline HfO2 layers of monoclinic structure that exhibit wide band gap (≈5.7 eV), low roughness (≈0.8 nm), high dielectric constant (k ≈ 18.8), and high breakdown voltage (≈2.7 MV/cm). Thin film transistors based on HfO2/ZnO stacks exhibit excellent electron transport characteristics with low operating voltages (≈6 V), high on/off current modulation ratio (∼107) and electron mobility in excess of 40 cm2 V−1 s−1.

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High-mobility metal-oxide thin-film transistors by spray deposition of environmentally friendly precursors

Cited by 14 publications

References 18 publications

Precursor-route ZnO films from a mixed casting solvent for high performance aqueous electrolyte-gated transistors

Precursor-route ZnO films from a mixed casting solvent for high performance aqueous electrolyte-gated transistors

Low‐Temperature, Nontoxic Water‐Induced Metal‐Oxide Thin Films and Their Application in Thin‐Film Transistors

High‐Mobility ZnO Thin Film Transistors Based on Solution‐processed Hafnium Oxide Gate Dielectrics

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