High mobility indium free amorphous oxide thin film transistors

Fortunato, Elvira; Pereira, L.; Barquinha, Pedro; Rego, A.M. Botelho do; Gonçalves, Gonçalo; Vilà, A.; Morante, J.R.; Martins, Rodrigo

doi:10.1063/1.2937473

Cited by 215 publications

(108 citation statements)

References 14 publications

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“…Combinatorial approaches have been employed to screen multi-component AOS systems, including the In-Ga-Zn-O system [49] and Zn-Sn-O (ZTO) system [50]. Other materials, such as a-In-Zn-O (a-IZO) [51], a-In-Ga-O (a-IGO) [14] and a-Ga-Sn-Zn-O (a-GTZO) [52], have also been reported. Th ese materials include the constituent elements of transparent conducting oxides, such as indium, zinc and tin as major constituents.…”

Section: Materials and Processesmentioning

confidence: 99%

Material characteristics and applications of transparent amorphous oxide semiconductors

2010

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A morphous semiconductors have created a new area of electronics known as 'giant microelectronics' typifi ed by devices such as solar cells and active-matrix (AM) fl at-panel displays. Single-crystalline semiconductor technology, typifi ed by crystal silicon electronics, is unsuitable for such applications, whereas amorphous or polycrystalline fi lms can be easily formed over large areas of greater than 1 m 2 at low temperature (e.g. < 400 °C) on both glass and plastic substrates, facilitating these new applications. Due to carrier scattering and trapping at defects on grain boundaries in polycrystalline materials (the grain boundary problem), hydrogenated amorphous silicon (a-Si:H) has been used more widely than polycrystalline silicon (p-Si) for practical large-size applications. However, the critical obstacles to be overcome to realize a-Si:H in future applications are low mobility (< 1 cm 2 /V s) and instability against electric stress and photo-illumination.In late 2004, we reported that an amorphous oxide semiconductor (AOS) with the composition a-InGaZnO 4 (a-IGZO) can be applied in the fabrication of fl exible, transparent thin-fi lm transistors (TFTs) having much improved performance compared to conventional TFTs based on a-Si:H and organic materials [1]. AOS materials have superior characteristics to conventional semiconductors, and therefore AOS TFT technology has grown very rapidly toward the realization of TFT backplanes for next-generation flat-panel displays. As summarized in Figure 1, a variety of prototype AM displays have been demonstrated by several companies within the last fi ve years since the fi rst report of AOS TFTs. Herein, we review the unique characteristics of AOS materials in relation to their TFT characteristics, and discuss why AOSs have such attractive electrical properties related to the electronic structures specifi c to transparent oxides. Active-matrix displays and circuits based on AOS TFT arraysTh e fi rst AOS-TFT was reported in late 2004 (see Figure 1). Just one year later, Toppan Printing quickly followed with the fi rst AM display based on AOS as a fl exible black-and-white electronic paper (e-paper) using a-IGZO TFTs

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Section: Materials and Processesmentioning

confidence: 99%

Material characteristics and applications of transparent amorphous oxide semiconductors

2010

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“…The researchers suggested that high postannealing (300°C) treatment of a-GaSnZnO TFTs produced better electrical performance and stability than those of a-IGZO TFTs due to the Ga 3+ and Sn 4+ ions. There have been many similar demonstrations to date involving Si, Al, Zr, Hf, Ga, and Sn with InZnO and ZnSnO matrices, aimed at improving electrical performance (e.g., μ fe and stability) [38][39][40][41][42][43][44][45][46][47][48][49][50][51][52].…”

Section: Multicomponent Oxide Semiconductorsmentioning

confidence: 99%

“…Cho et al [51] reported an amorphous AlZnSnO TFT, that exhibited μ fe of 10.1 cm 2 /V · s, S of 0.6 V/ decade, and drain current on/off ratio of 10 9 after annealing at 180°C. Later, Fortunato et al [52] developed an amorphous GaSnZnO channel layer, produced by rf magnetron cosputtering using gallium zinc oxide (GZO) and tin (Sn) targets. The GaSnZnO TFTs exhibited high electrical performance (μ fe of 24.6 cm 2 /V · s, S of 0.38 V/decade, and drain current on/off ratio of 8×10 7 ).…”

Section: Multicomponent Oxide Semiconductorsmentioning

confidence: 99%

Overview of electroceramic materials for oxide semiconductor thin film transistors

2013

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The flat panel display (FPD) market has been experiencing a rapid transition from liquid crystal (LC) to organic light emitting diode (OLED) displays, leading, in turn, to the accelerated commercialization of OLED televisions already in 2013. The major driving force for this rapid change was the adaptation of novel oxide semiconductor materials as the active channel layer in thin film transistors (TFTs). Since the report of amorphous-InGaZnO (a-IGZO) semiconductor materials in 2004, the FPD industry has accelerated the development of oxide TFTs for mass-production. In this review, we focus on recent progress in applying electro-ceramic materials for oxidesemiconductor thin-film-transistors. First, oxide-based semiconductor materials, distinguished by vacuum or solution processing, are discussed, with efforts to develop high-performance, cost-effective devices reviewed in chronological order. The introduction and role of high dielectric constant -reduced leakage gate insulators, in optimizing oxide-semiconductor device performance, are next covered. We conclude by discussing current issues impacting oxide-semiconductor TFTs, such as field effect mobility and device stability and the proposed directions being taken to address them.

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“…However, indium is an expensive and rare material. Therefore, indium-free materials like zinc tin oxide (ZTO), have been studied intensively in these days [2,3]. Most of AOS TFTs are annealed for the improvement of electrical performance and stability of device, after deposition at room temperature (RT).…”

Section: Introductionmentioning

confidence: 99%

Influence of Wet Annealing on the Performance of SiZnSnO Thin Film Transistors

Han¹,

Lee²

2015

Transactions on Electrical and Electronic Materials

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Amorphous SiZnSnO(SZTO) thin film transistors(TFTs) have been fabricated by RF magnetron sputtering process, and they were annealed in air and in wet ambient. The electrical performance and the structure were analyzed by I-V measurement, XPS, AFM, and XRD. The results showed improvement in device performance by wet annealing process compared to air annealing treatment, because free electron was shown to be increased due to reaction of oxygen and hydrogen generating oxygen vacancy. This is understood by the generation of free electrons. We expect the wet annealing process to be a promising candidate to contributing to high electrical performance of oxide thin film transistors for backplane device applications.

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High mobility indium free amorphous oxide thin film transistors

Cited by 215 publications

References 14 publications

Material characteristics and applications of transparent amorphous oxide semiconductors

Material characteristics and applications of transparent amorphous oxide semiconductors

Overview of electroceramic materials for oxide semiconductor thin film transistors

Influence of Wet Annealing on the Performance of SiZnSnO Thin Film Transistors

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