1992
DOI: 10.1063/1.106722
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High mobility hydrogenated and oxygenated microcrystalline silicon as a photosensitive material in photovoltaic applications

Abstract: Device grade microcrystalline silicon owing to reduced oxygen contamination Observation of valenceband discontinuity of hydrogenated amorphous silicon/hydrogenated amorphous silicon carbide heterojunction by photocurrentvoltage measurements

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Cited by 36 publications
(18 citation statements)
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“…After annealing in O 2 at 1601C the CE signal does not appear, but instead a strong increase of a resonance at g42.0052 is observed. The different behaviour upon annealing in O 2 and Ar indicate that the observed changes in the ESR signals are not due to a mere thermal annealing effect, but rather to oxidation or adsorption and desorption at the surface.…”
Section: Adsorptionmentioning
confidence: 99%
See 1 more Smart Citation
“…After annealing in O 2 at 1601C the CE signal does not appear, but instead a strong increase of a resonance at g42.0052 is observed. The different behaviour upon annealing in O 2 and Ar indicate that the observed changes in the ESR signals are not due to a mere thermal annealing effect, but rather to oxidation or adsorption and desorption at the surface.…”
Section: Adsorptionmentioning
confidence: 99%
“…The recent popularity of microcrystalline silicon (mc-Si:H) began with the first successful applications of this material as an absorber layer in thin film solar cells [1][2][3] and, most importantly, when it was reported [3] that such solar cells did not suffer from the notorious light-induced degradation, known as the Staebler-Wronski effect (SWE), which is observed in amorphous silicon [4]. Easy fabrication of mc-Si:H, i.e.…”
Section: Introductionmentioning
confidence: 99%
“…Preliminary work was done by Lucovsky et al [4], and Faraji et al [5]. Subsequently, our group successfully pioneered [6][7][8] entirely microcrystalline pin-and nip-type silicon solar cells fabricated with the very high frequency (VHF) glow discharge method, thereby rapidly attaining AM 1.5 efficiencies higher than 7% [9,10].…”
Section: Introductionmentioning
confidence: 99%
“…The possibility to use µ c-Si for the fabrication of photosensitive layers was demonstrated in the early 1990s [48,49], and the first µ c-Si:H solar cells showing reasonable efficiency of 4.6% were fabricated in 1994 [50]. The bandgap of µ c-Si:H is close to that of crystalline Si, which allows extension of the absorption range to red and infrared light.…”
Section: Microcrystalline Si and "Micromorph" Solar Cellsmentioning
confidence: 99%