Stability of microcrystalline silicon for thin film solar cell applications

Finger, F.; Carius, R.; Dylla, T.; Klein, Susanne; Okur, Salih; Güneş, Mehmet

doi:10.1049/ip-cds:20030636

Cited by 74 publications

(96 citation statements)

References 31 publications

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“…Due to their excellent physical and chemical properties such as relatively high electrical conductivity, ease of synthesis and design flexibility [1][2], CPs can be easily functionalized to improve the selectivity for different gases. Stability is one of the most important criteria for the application of organic [13][14][15][16] and inorganic devices [17][18][19]. Therefore, growths and stabilities of CPs have been extensively studied [13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of PEDOT:PSS beyond humidity saturation

Kuş

Okur

2009

Sensors and Actuators B: Chemical

152

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a b s t r a c t PEDOT:PSS humidity sensor was fabricated using a drop-casting method between thermally evaporated gold electrodes with 30 m separation and 300 m channel width on a glass substrate. AC, DC resistivity, and AFM techniques were used to characterize the PEDOT:PSS humidity sensor in the same environmental conditions. The change of resistivity was monitored with increasing relative humidity (RH) up to 90%. The resistivity increases linearly up to a maximum value, and then it starts to decrease abruptly above 80% relative humidity (RH) after saturation of water uptake. The decrease in resistivity above 80% RH seems to be due to the water meniscus layer formed on the saturated PEDOT:PSS film. Below 80% RH, the device works like a humidity sensor.

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Section: Introductionmentioning

confidence: 99%

Electrical characterization of PEDOT:PSS beyond humidity saturation

Kuş

Okur

2009

Sensors and Actuators B: Chemical

152

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“…6,8,[15][16][17] It is argued that optimum material benefits from surface passivation by residual amorphous phase, which also makes the material more compact and less susceptible to indiffusion of atmospheric gases after deposition. 17,18 We report on the effect of the discharge power under VHF-hphP conditions on the structure formation of c- Author to whom correspondence should be addressed; electronic mail: y.mai@fz-juelich.de…”

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confidence: 99%

Structure adjustment during high-deposition-rate growth of microcrystalline silicon solar cells

Mai

Klein

Geng

et al. 2004

Applied Physics Letters

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Preparation of microcrystalline silicon for solar cell applications is investigated under high-pressure, high-power conditions with plasma-enhanced chemical vapor deposition at 95 MHz. It is found that the deposition rate depends mainly on the amount of silane in the reaction zone. Changes in the discharge power affect the deposition rate very little. This points to silane depletion under these process conditions. The amount of H radicals, on the other hand, increases with increasing discharge power and leads to structure changes of the material. Making use of this effect, optimum phase mixture material at the transition from highly crystalline to amorphous growth can be deposited at considerably higher deposition rates without loss in solar cell performance. The preparation of microcrystalline silicon ͑c-Si: H͒ with plasma enhanced chemical vapor deposition processes has made considerable progress over the last ten years in view of deposition rates for high quality material for solar cell applications. A breakthrough was the use of higher plasma excitation frequencies in plasma enhanced chemical vapor deposition (PECVD) in place of the standard 13.56 MHz.

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“…As for grain size, the grain size of ∼ 30 nm, extracted from AFM and XRD, and validated by TEM/STEM, is within the desirable range and consistent with the state-of-the-art mc-Si:H. FTIR suggests a high Si-O bonding content in the mc-Si:H film, which may be caused by voids, as shown in the TEM image. Oxygen in mc-Si has been attributed to p-type deep defects, 17 leading to a reduction in solar cell efficiency via increased recombination loss and photo-response at the infrared range. 18 The low short-circuit current density of the solar cell can partly be attributed to optical losses caused by the thin mc-Si:H i-layer (150 nm) used in this work.…”

Section: Discussionmentioning

confidence: 99%

Characterization of microcrystalline I-layer for solar cells prepared in low temperature - plastic compatible process

Śliz

Ahnood

Nathan

et al. 2012

Photonics for Solar Energy Systems IV

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Microcrystalline silicon (mc-Si) films deposited using a Plasma Enhanced Chemical Vapour Deposition (PECVD) process constitute an important material for manufacturing low-cost, large-area thin-film devices, such as solar cells or thin-film transistors. Although the deposition of electronic-grade mc-Si using the PECVD process is now well established, the high substrate temperature required (∼ 300• C) does not lend itself to electronic devices with flexible form factors fabricated on low-cost plastic substrates. In this study, we first investigated an intrinsic mc-Si layer deposited at plastic-compatible substrate temperatures (150• C) by characterising the properties of the film and then evaluated its applicability to p-i-n solar cells though device characterisation. When the performance of the solar cell was correlated with film properties, it was found that, although it compared unfavourably with mc-Si deposited at higher temperatures, it remained a very promising option. Nonetheless, further development is required to increase the overall efficiency of mc-Si flexible solar cells.

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Stability of microcrystalline silicon for thin film solar cell applications

Cited by 74 publications

References 31 publications

Electrical characterization of PEDOT:PSS beyond humidity saturation

Electrical characterization of PEDOT:PSS beyond humidity saturation

Structure adjustment during high-deposition-rate growth of microcrystalline silicon solar cells

Characterization of microcrystalline I-layer for solar cells prepared in low temperature - plastic compatible process

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