High Mobility Hafnium and Hydrogen Co-Doped Indium Oxide Transparent Conductive Films and Application in High Efficiency Silicon Heterojunction Solar Cell
Abstract:In this work, high quality hafnium and hydrogen co-doped In
O (IHfO:H) transparent conductive
films are developed via a reactive plasma deposition (RPD) technique
followed by air atmosphere annealing. Crystallinity, valence states, and
opto-electronic properties of the IHfO:H films under different H
concentration (0-1.5 %) and different annealing
temperature (100-250 °C) are systematically investigated. The effects of
hydrogen doping and annealing temperature on the properties of the
IHfO:H films are discuss… Show more
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