High-Mobility, Flexible Carbon Nanotube Thin-Film Transistors Fabricated by Transfer and High-Speed Flexographic Printing Techniques

Higuchi, Kentaro; Kishimoto, Shigeru; Nakajima, Yumiko; Tomura, Takuya; Takesue, Masafumi; Hata, Kenji; Kauppinen, Esko I.; Ohno, Yutaka

doi:10.7567/apex.6.085101

Cited by 29 publications

(27 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Lowering the process temperature can broaden the range of choices of substrate including low cost plastic films, rubber, textiles and even paper. In addition, solution processable semiconductors 10 11 12 13 exhibit mobilities exceeding 20 cm 2 V −1 s −1 . This value is already exceeding that of amorphous Si, opening the door to many practical applications.…”

mentioning

confidence: 99%

Printable elastic conductors with a high conductivity for electronic textile applications

et al. 2015

View full text Add to dashboard Cite

The development of advanced flexible large-area electronics such as flexible displays and sensors will thrive on engineered functional ink formulations for printed electronics where the spontaneous arrangement of molecules aids the printing processes. Here we report a printable elastic conductor with a high initial conductivity of 738 S cm−1 and a record high conductivity of 182 S cm−1 when stretched to 215% strain. The elastic conductor ink is comprised of Ag flakes, a fluorine rubber and a fluorine surfactant. The fluorine surfactant constitutes a key component which directs the formation of surface-localized conductive networks in the printed elastic conductor, leading to a high conductivity and stretchability. We demonstrate the feasibility of our inks by fabricating a stretchable organic transistor active matrix on a rubbery stretchability-gradient substrate with unimpaired functionality when stretched to 110%, and a wearable electromyogram sensor printed onto a textile garment.

show abstract

mentioning

confidence: 99%

Printable elastic conductors with a high conductivity for electronic textile applications

et al. 2015

View full text Add to dashboard Cite

show abstract

“…As a result, applications are expected for applications in flat panel display elements, wiring in largescale integration (LSI) circuits and devices, as well as flexible devices, and research focusing on applications for electronics is undergoing [1][2][3][4][5]. For the single-walled CNT, the structure is determined by the chiral vector, which connects the lattice points of the overlapping benzene rings when the graphene sheet is rolled, and CNTs are broadly classified into armchair, zigzag, and chiral types.…”

Section: Introductionmentioning

confidence: 99%

“…A semiconductor CNT has superior electrical conduction properties, including a long mean free path and ballistic conduction. As a result, applications are expected for applications in flat panel display elements, wiring in largescale integration (LSI) circuits and devices, as well as flexible devices, and research focusing on applications for electronics is undergoing [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Investigation of Carbon Nanotube Transistor by the Dip Coat Method

Ichikawa

Matsubara

Suda

2016

Elect Comm in Japan

View full text Add to dashboard Cite

We have proposed a convenient fabrication technique for a carbon nanotubes (CNTs) transistor. The dip coat method using a metallic solution was employed to deposit metal catalysts of CNTs on the source and drain electrodes on a SiO 2 -coated Si substrate at a low temperature. This method does not require a vacuum system or a long process time. After fabricating the CNTs using chemical vapor deposition, we evaluated the morphology of the CNTs using scanning electron microscopy and their electrical properties as a CNT field effect transistor (FET). The CNTs formed bridges between the source and drain electrodes. The field effect mobility of the CNT-FET was measured to be 3000 cm 2 /Vs based on the transfer curve. On the basis of the electrical properties, a CNT-FET with high field effect mobility can be obtained. C⃝ 2016 by Wiley Periodicals, Inc. Electron Comm Jpn, 99(9): 79-84, 2016; Published online in Wiley Online Library (wileyonlinelibrary.com).

show abstract

“…8 Carbon nanotube (CNT) has become a new favorite channel material because of its high conductivity and large carrier mobility and has been widely applied in conventional FETs. 9,10 It is expected that the interface reaction between a ferroelectric film and CNTs is small, because no dangling bonds exist on the surface of ideally formed CNTs. 5 Thus, some researchers have developed and fabricated CNT-based FeFET.…”

mentioning

confidence: 99%

Ferroelectric field-effect transistors based on multi-walled carbon nanotube micron-wide stripe arrays

Song

Liu

Zhong

et al. 2014

Applied Physics Letters

View full text Add to dashboard Cite

Ferroelectric field-effect transistors (FeFETs) with multiwall carbon nanotube (MWCNT) micron-wide stripe arrays as channel and (Bi,Nd)4Ti3O12 films as insulator were developed and fabricated. The prepared stripe arrays MWCNT-FeFETs possess excellent properties such as large “on” current, high Ion/Ioff ratio, high channel carrier mobility, and wide memory window. These good performances are mainly attributed to the use of the MWCNT micron-wide stripe arrays channel. The spaces between MWCNT stripes can inhibit the function of the mixed metallic nanotubes in MWCNTs and, thus, improve the semiconductor property of channel layer, and sequentially improve the Ion/Ioff ratio. In addition, the stripe arrays and CNTs within stripes have very high density; therefore, the metallic nanotubes within stripes can transfer many carriers and, thereby, display large “on” current and high channel carrier mobility.

show abstract

High-Mobility, Flexible Carbon Nanotube Thin-Film Transistors Fabricated by Transfer and High-Speed Flexographic Printing Techniques

Cited by 29 publications

References 30 publications

Printable elastic conductors with a high conductivity for electronic textile applications

Printable elastic conductors with a high conductivity for electronic textile applications

Fabrication and Investigation of Carbon Nanotube Transistor by the Dip Coat Method

Ferroelectric field-effect transistors based on multi-walled carbon nanotube micron-wide stripe arrays

Contact Info

Product

Resources

About