High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

Abstract

The authors report on the fabrication of thin film transistors (TFTs), which use an amorphous indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for which the channel length and width are patterned by photolithography and dry etching. To prevent plasma damage to the active channel, a 100-nm-thick SiOx layer deposited by plasma enhanced chemical vapor deposition was adopted as an etch stopper structure. The a-IGZO TFT (W∕L=10μm∕50μm) fabricated on glass exhibited a high field-effect mobility of 35.8cm2∕Vs, a subthreshold gate swing value of 0.59V∕decade, a thrseshold voltage of 5.9V, and an Ion∕off ratio of 4.9×106, which is acceptable for use as the switching transistor of an active-matrix TFT backplane.

Fundamental Performance Limits of Carbon Nanotube Thin-Film Transistors Achieved Using Hybrid Molecular Dielectrics

“…Note that the performance reported here for CNT/VA-SAND TFTs compares favorably with devices fabricated from competing semiconducting materials such as polycrystalline Si, 41 organics, 42 and other inorganics. 43 The attractions of monodisperse semiconducting CNT inks include excellent compatibility with ink-jet printing, 3 mechanical flexibility, and environmental stability, making them promising candidates for next-generation printed electronics.…”

Overview of electroceramic materials for oxide semiconductor thin film transistors

“…The researchers suggested that high postannealing (300°C) treatment of a-GaSnZnO TFTs produced better electrical performance and stability than those of a-IGZO TFTs due to the Ga 3+ and Sn 4+ ions. There have been many similar demonstrations to date involving Si, Al, Zr, Hf, Ga, and Sn with InZnO and ZnSnO matrices, aimed at improving electrical performance (e.g., μ fe and stability) [38][39][40][41][42][43][44][45][46][47][48][49][50][51][52].…”

Restorative effect of oxygen annealing on device performance in HfIZO thin-film transistors

“…[21][22][23] Significantly, amorphous metal-oxide compounds such as indium-gallium-zinc-oxide (IGZO) have been explored for use as an active layer in transparent displays, due to their higher driving current, transparency and room-temperature compatible process. [24][25][26][27][28] Recently, we observed that the substitution of gallium with hafnium and post-treatment with oxygen annealing substantially improves the device performance of amorphous hafnium-indiumzinc-oxide (a-HfIZO) TFTs. Furthermore, such devices exhibit excellent photo-induced stability against photo irradiation with wave length of ∼400 nm.…”