High mobility 2D electron gas in iodine modulation doped CdTe/CdMgTe heterostructures

Karczewski, G.; Jaroszyński, J.; Barcz, A.; Kutrowski, M.; Wójtowicz, T.; Kossut, J.

doi:10.1016/s0022-0248(98)80169-3

Cited by 75 publications

(37 citation statements)

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“…Studies of trions and other excitonic effects in modulation-doped CdTe wells grown at University of Würzburg have also been reported by Kochereshko and co-workers [8]. Spectroscopy is now being done in several laboratories on the n-type modulation-doped CdTe wells grown at the Institute of Physics, Warsaw, which have the highest mobilities of any CdTe samples grown so far (up to 1.4 x 10 5 cm2/(V s)) [9].…”

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confidence: 80%

“…But it is interesting that spectra of the CdTe QWs grown in Warsaw are turning out similar to those of the Grenoble samples, even though they have greatly improved mobility ( 10 5 cm 2 /(V s) [9]). As noted earlier, strong potential fluctuations can localise the 2D electrons, reducing the screening and phase-space filling effects that destabilize exciton states.…”

Section: Exciton Trions In Ii-vi ηEterostructures 105mentioning

confidence: 98%

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Exciton Trions in II-VI Heterostructures

et al. 1998

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Optical spectra associated with transitions that create or annihilate charged excitons X -or X+ can be observed in quantum well heterostructures containing an electron gas or a hole gas, respectively. A review is given of properties of trion states in CdTe quantum wells in zero field and of the magnetic field-dependence of the circular polarization and oscillator strength of the trion optical resonance. The possibility that disorder is needed to stabilise trion states in concentrated 2D electron or hole systems is discussed.PACS numbers: 73.20. Dx, 78.66.Ηf, 71.35.Ji, 78.20.Ls In 1958, M.A. Lampert [1] extended the analogy between the exciton Χ in a semiconductor and the hydrogen atom H in free space by postulating the existence of two types of charged exciton species or "trions" . The first is X -(two electrons bound to one hole). For mh » me , this is a close analogue of the H -ion where two electrons with antiparallel spins move in a very diffuse orbital around a proton. The second species is X+ (two holes and one electron). For mh » me , this is analogous to the Η2 molecular ion where one electron moves in a molecular orbital around two protons (Lampert suggested the nomenclature X2 , but "X+" has become more usual).Both kinds of trion have only a very small binding energy and their observation in bulk semiconductors has proved very elusive. However, the calculated binding energy of trions is enhanced by an order of magnitude in 2 dimensions [2]. Moreover, an excess of electrons (or holes) can readily be produced in a quantum well heterostructure by modulation doping, favoring the formation of X - (or X+) in the well.The first clear identification of the trion X -was made in 1993, in the optical spectra of modulation-doped CdTe quantum wells containing 10 10 to 10 11 electrons/cm2 [3]. Trions X- [4] and X+ [5] were then identified in GaAs (99)

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confidence: 80%

Section: Exciton Trions In Ii-vi ηEterostructures 105mentioning

confidence: 98%

Exciton Trions in II-VI Heterostructures

et al. 1998

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“…The substrates were fabricated in separate MBE processes by covering the GaAs wafer first with 10 Å of ZnTe and then by about 3 µm of undoped CdTe (more details are given in Ref. [8]). Samples used in our studies are shown in Fig.…”

Section: Samples and Experimentsmentioning

confidence: 99%

“…1 Parameters characterizing the samples are given in Table I. In the case of the #sp800 sample we introduced three additional 100 Å thick doped layers (with concentration 10 18 cm -3 ) located deep in the Cd 1-x Mg x Te bottom barrier, and separated from the quantum well by 1000 Å, 2000 Å and 3000 Å, respectively [8].…”

Section: Samples and Experimentsmentioning

confidence: 99%

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Effect of hydrostatic pressure on degradation of CdTe/CdMgTe heterostructures grown by molecular beam epitaxy on GaAs substrates

Wasik

Baj

Siwiec-Matuszyk

et al. 2001

Journal of Applied Physics

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We have shown that external hydrostatic pressure leads to the creation of structural defects, mainly in the vicinity of the II-VI/GaAs interface in the CdTe/Cd 1-x Mg x Te heterostructures grown by the molecular beam epitaxy method on GaAs substrates.These defects propagating across the epilayer cause permanent damage to the samples from the point of view of their electrical properties. In contrast, photoluminescence spectra are only weakly influenced by pressure. Our results shed light on the degradation process observed even without pressure in II-VI -based heterostructures.2

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