High magnetoresistance in bipolar semiconductors by impurity concentration optimisation

Kollyukh, A. G.; Malyutenko, V. K.; Sukhorebry, V B; Chovet, A.; Cristoloveanu, S.

doi:10.1088/0022-3727/19/5/003

Cited by 4 publications

(3 citation statements)

References 4 publications

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“…can be modulated by H, and therefore suggest that EHR causes the large linear MR. It is known that MR can be enhanced by modulating EHR in bipolar semiconductors, for example, by changing the concentration of acceptor and donor impurities [34], or by application of pressure [35].…”

Section: Later]mentioning

confidence: 99%

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Bipolar-driven large linear magnetoresistance in silicon at low magnetic fields

et al. 2013

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Large linear magnetoresistance (MR) in electron-injected p-type silicon at very low magnetic field is observed experimentally at room temperature. The large linear MR is induced in electron-dominated space-charge transport regime, where the magnetic field modulation of electron-to-hole density ratio controls the MR, as indicated by the magnetic field dependence of Hall coefficient in the silicon device. Contrary to the space-charge-induced MR effect in unipolar silicon device, where the large linear MR is inhomogeneity-induced, our results provide a different insight into the mechanism of large linear MR in non-magnetic semiconductors that is not based on the inhomogeneity model. This approach enables homogeneous semiconductors to exhibit large linear MR at low magnetic fields that until now has only been appearing in semiconductors with strong inhomogeneities.PACS number(s): 52.75. 71.35.Ee, 72.20.My, 85.30.Fg

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Section: Later]mentioning

confidence: 99%

“…Figure 2 MR can be enhanced by modulating EHR in bipolar semiconductors, for example, by changing the concentration of acceptor and donor impurities [34], or by application of pressure [35].…”

Section: The Magnetoresistance Ratio Is Defined As Mrmentioning

confidence: 99%

Bipolar-driven large linear magnetoresistance in silicon at low magnetic fields

et al. 2013

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“…[5−7] Spinbased logic devices at present are based on the giant magnetoresistance (GMR) effect in metals, while the effect is too weak for logic operations. [7] Recently, extremely large magnetoresistance (MR) has been found in some non-magnetic semiconductors, such as InSb, [5,8] Ag 2 Se, [9] and Si. [10−12] These discoveries indicate that semiconductors are potentially superior alternatives to realize logic operations.…”

mentioning

confidence: 99%

Programmable Logic Based on Large Magnetoresistance of Germanium

Chen

Piao

Luo

et al. 2016

Chinese Phys. Lett.

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We find extremely large low-magnetic-field magnetoresistance (∼350% at 0.2 T and ∼180% at 0.1 T) in germanium at room temperature and the magnetoresistance is highly sensitive to the surface roughness. This unique magnetoelectric property is applied to fabricate logic architecture which could perform basic Boolean logic including AND, OR, NOR and NAND. Our logic device may pave the way for a high performance microprocessor and may make the germanium family more advanced.

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Enhanced linear magnetoresistance of germanium at room temperature due to surface imperfection

Chen

Piao

Luo

et al. 2015

Applied Physics Letters

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We report an enhanced linear magnetoresistance in germanium at room temperature. The magnetic-field dependence shows no saturation at magnetic fields (B) up to 4 T and the magnetoresistance sensitivity at low fields (B < 0.4 T) can reach ∼8 T−1. It is found that this magnetoresistance effect is ascribed to surface imperfection, which cannot only increase the recombination rate but also enhance the inhomogeneity. Our work may be attractive to the magnetic-field sensing industry and make germanium-based magnetoelectronics further developed.

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High magnetoresistance in bipolar semiconductors by impurity concentration optimisation

Cited by 4 publications

References 4 publications

Bipolar-driven large linear magnetoresistance in silicon at low magnetic fields

Bipolar-driven large linear magnetoresistance in silicon at low magnetic fields

Programmable Logic Based on Large Magnetoresistance of Germanium

Enhanced linear magnetoresistance of germanium at room temperature due to surface imperfection

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