High magnetic and thermal stability of nanopatterned [Co/Pd] based pseudo spin-valves with perpendicular anisotropy for 1 Gb magnetic random access memory applications

Abstract

Nanopatterned [Co/Pd] based pseudo spin-valves (PSV) with perpendicular anisotropy exhibited high magnetic and thermal stabilities suitable for 1 Gb magnetic random access memory applications. Magnetic force microscopy images clearly demonstrated that the nanopatterned [Co/Pd] based PSVs down to 75×75 nm2 show a single domain configuration and a coherent magnetic reversal behavior. Furthermore, the nanopatterned [Co/Pd] based PSV with 90×90 nm2 device size showed stable magnetoresistance performance and switching characteristics. The high magnetic anisotropy and the large exchange energy of [Co/Pd] based PSV with perpendicular anisotropy are thought to be the main physical reasons for the technical promises.

Tailoring the magnetic and magneto-transport properties of Pd/Co multilayers and pseudo-spin valve antidots

“…PSVs have been attracting growing interest because their possible applications, e.g. in magnetoresistance devices, magnetic recording and random-access memory (MRAM) [18][19][20]. Non-magnetic metal separators, such as Cu or Ta, uncouple the two magnetic multilayers, generating antiparallel magnetization states during the reversal of the magnetization, enabling one to obtain high values of magnetoresistance [18,19].…”

“…in magnetoresistance devices, magnetic recording and random-access memory (MRAM) [18][19][20]. Non-magnetic metal separators, such as Cu or Ta, uncouple the two magnetic multilayers, generating antiparallel magnetization states during the reversal of the magnetization, enabling one to obtain high values of magnetoresistance [18,19]. Different configurations have been proposed to enhance the GMR of PSVs, e.g.…”

Switching properties of SrRuO 3 /Pb(Zr 0.4 Ti 0.6 )O 3 /SrRuO 3 capacitor grown on Cu-coated Si substrate measured at various temperatures

“…Nonvolatile ferroelectric random access memories (FeR-AMs) have been way ahead of the conventional magnetic random access memory (MRAMs) due to their greater density, faster speed, lower power and voltage for reading and writing [1,2]. For the next generation of high-density FeRAMs with below 0.25 μm design rule, the cell structure should be changed to a stack or concave-type structure [3].…”