High Linearity InGaP/GaAs Power HBTs by Collector Design

Wang, Che-ming; Hsu, Hao-Teng; Shu, Hsiu Chuan; Hsin, Yue-Ming

doi:10.1109/led.2003.822654

Cited by 11 publications

(2 citation statements)

References 7 publications

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“…[1][2][3][4][5][6][7] However, a serious problem associated with scaled InGaP / GaAs HBTs is the current gain reduction with shrinking device area. [8][9][10][11][12] Nakajima et al suggested that the emitter size effect of mesa-type HBTs is caused by a lateral diffusion of injected carriers into the extrinsic base region.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive investigation on emitter ledge length of InGaP∕GaAs heterojunction bipolar transistors

Liu

Cheng

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The influence of emitter ledge length on the performance of InGaP∕GaAs heterojunction bipolar transistors is comprehensively investigated. Due to the band-bending effect at the intersection of the emitter ledge edge with the exposed base surface, an undesired potential saddle point is formed. Moreover, emitter ledge passivations that are longer or shorter than an optimal length result in the deterioration of device performance. Based on the theoretical analysis and experimental results, the surface recombination effect of the device with an emitter ledge length of 0.8μm is negligible compared with the unpassivated device. Also, the device with the emitter ledge length of 0.8μm shows nearly the best dc characteristics and acceptable rf performance. Therefore, the optimum emitter ledge length in this study is near 0.8μm.

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Section: Introductionmentioning

confidence: 99%

Comprehensive investigation on emitter ledge length of InGaP∕GaAs heterojunction bipolar transistors

Liu

Cheng

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…As for the linearity, two major distortion components from the HBTs structure are transconductance (g m ) and basecollector capacitance (C BC ). The effects of g m and C BC on linearity of power HBTs have been studied under different bias voltages, collector currents, loads and frequencies [11][12][13]. The g m is strongly nonlinear at lower current density when the device just turns on.…”

Section: Introductionmentioning

confidence: 99%

Enhancedf_Tand linearity performance of InGaP/GaAs HBTs using a non-uniform doping collector

Wang¹,

Hsin²

2007

Semicond. Sci. Technol.

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In this paper, the ac and power linearity characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with collector doping design have been presented. The collector design is to employ a thin high-doping layer inside the low-doping collector. The thickness, doping and location of the inserted layer are systematically studied with consideration of breakdown characteristics and the Kirk effect. The Kirk effect is relieved by redistributed electric fields in the non-uniform doping collector to extend the operational current and thus to increase the cutoff frequency ( f T ) and output power (P out ). The collector current at the onset of the Kirk effect is extended from 9.6 to 17.3 mA and f T is increased from 36 to 48 GHz for a device size of 4 × 12 × 2 µm 2 . The corresponding improvement in the saturation output power is 2.2 dB measured at 1.8 GHz. In addition, the impact of the collector doping profile on the base-collector capacitance (C BC ) and thus the linearity is simulated, discussed and measured. For an HBT with a thin high-doping layer being inserted 4000 Å from the base-collector junction, the experimental result on output third-order intercept point (OIP3) demonstrates the significant improvement by as large as 10 dB at a frequency of 1.8 GHz.

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Linearity optimizing on HBT power amplifier design

Wang²,

Ueng

2009

Microelectronics Journal

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High Linearity InGaP/GaAs Power HBTs by Collector Design

Cited by 11 publications

References 7 publications

Comprehensive investigation on emitter ledge length of InGaP∕GaAs heterojunction bipolar transistors

Comprehensive investigation on emitter ledge length of InGaP∕GaAs heterojunction bipolar transistors

Enhancedf_Tand linearity performance of InGaP/GaAs HBTs using a non-uniform doping collector

Linearity optimizing on HBT power amplifier design

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High Linearity InGaP/GaAs Power HBTs by Collector Design

Cited by 11 publications

References 7 publications

Comprehensive investigation on emitter ledge length of InGaP∕GaAs heterojunction bipolar transistors

Comprehensive investigation on emitter ledge length of InGaP∕GaAs heterojunction bipolar transistors

EnhancedfTand linearity performance of InGaP/GaAs HBTs using a non-uniform doping collector

Linearity optimizing on HBT power amplifier design

Contact Info

Product

Resources

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Enhancedf_Tand linearity performance of InGaP/GaAs HBTs using a non-uniform doping collector