High linearity 1-ohm RF switches with phase-change materials

Moon, Junghwan; Seo, HC; Le, Duc Dung

doi:10.1109/sirf.2014.6828512

Cited by 4 publications

(1 citation statement)

References 6 publications

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“…Various directly and indirectly heated GeTe based switches are reported by University of Michigan [29], [57], [60], Northrop Grumman Corp. [30], [31], [61], HRL Laboratories [32], [33], [62], [63], University of Limoges [34], and University of Waterloo [15], [19], [40], [42] are shown in Figs. 5-9, respectively.…”

Section: Phase Change Rf Switchesmentioning

confidence: 99%

Recent Advancements in Reconfigurable mmWave Devices Based on Phase-Change and Metal Insulator Transition Materials

et al. 2023

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Chalcogenide Phase Change Materials (PCM) and metal insulator transition (MIT) materials are a group of materials that are capable of switching between low resistance and high resistance states. These emerging materials have been widely used in optical storage media and memory devices. Over the past recent years, there have been interests in exploiting the PCM and MIT materials, especially germanium antimony telluride (GST) alloys and vanadium dioxide (VO 2 ), for radio frequency (RF) applications. The PCM and MIT-based RF devices are expected to bridge the gap between semiconductor switches and microelectromechanical system (MEMS) switches as they combine the low insertion loss performance of MEMS technology and the small size and reliability performance of semiconductor technology. This article presents an overview of the PCM and MIT materials for RF circuits and discusses the recent advancements in reconfigurable millimeter-wave (mmWave) devices based on PCM and MIT materials in depth.

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