High-k metal gate poly opening polish at 28nm technology polish rate and selective study

Sie, W. S.; Liu, Y. L.; Chen, J. L.; Hong, Wei; Huang, Rao; Huang, Po-Chin; Li, Y. T.; Lin, C.-H.; Kung, C. H.; Lin, Y. M.; Lin, Renn Guey; Hsu, H. K.; Wang, Oliver; Lin, Jian-Yang

doi:10.1109/icpt.2014.7017275

Cited by 1 publication

(14 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In figure 6(a), implanted C + distributes from the surface to 21 nm and a peak seems around 10nm in depth. For 1×10 16 ions/cm 2 implanted SiO2 film, the RR of 0.54 nm/s shows no change in depth from the surface to 50 nm. On the other hand, for SiO2 film with 3×10 16 ions/cm 2 , the RR is 0.20 nm/s on the surface, then, gradually increases to 0.21 nm/s at 12 nm deep, and drastically rises to 0.54 nm/s in depth over 40 nm.…”

Section: A Sio2 Filmmentioning

confidence: 89%

“…Si + was implanted at 4.0 keV into SiO2, 2.0 keV into Si3N4, and poly-Si films, respectively. The implantation dose was changed with a range from 1.0 ×10 16 to 3×10 16 ions/cm 2 . SiO2 films densified by using rapid thermal annealing (RTA) at 500 °C in 1 minute were prepared after C + implantation from 1.0 ×10 16 to 3×10 16 ions/cm 2 at 2.0 keV.…”

Section: Methodsmentioning

confidence: 99%

“…The implantation dose was changed with a range from 1.0 ×10 16 to 3×10 16 ions/cm 2 . SiO2 films densified by using rapid thermal annealing (RTA) at 500 °C in 1 minute were prepared after C + implantation from 1.0 ×10 16 to 3×10 16 ions/cm 2 at 2.0 keV. All CMP processes were performed on hard pads using colloidal silica-based slurry.…”

Section: Methodsmentioning

confidence: 99%

“…Figure 6(a) and (b) show the dependency of simulated implantation depth profile with a dose of 3×10 16 ions/cm 2 , energy for C + at 2.0 keV, Si + at 4.0 keV, and RR of C + or Si + implanted SiO2 film with a dose ranging from 1×10 16 to 3×10 16 ions/cm 2 at 2.0 keV and 4.0 keV, respectively. The curve of peak value at 10 nm in figure 6(a), is Rp of C + implantation at 2.0 keV, and that in figure 6(b), is Rp of Si + implantation at 4.0 keV.…”

Section: A Sio2 Filmmentioning

confidence: 99%

“…This ought to be an important parameter, however, their proposal only deals with the approaching step of abrasive particles to the surface of a SiO2 wafer, which is insufficient to describe polishing mechanism of SiO2 CMP. High selectivity is almost obtained by three factors, pH at around 7, electronegative surfactant and CeO2 abrasive [16]. At pH 7, zeta potential of SiO2 is negative [17] whereas that of Si3N4 is positive [18], so that electronegative surfactants adhere only to the Si3N4 and interrupt reaction with the abrasive.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Enhancement of Selectivity for Chemical Mechanical Polishing by Ultra-High-Dose C and Si Ion Implantation

Yuan,

Omori,

Yamaguchi

et al. 2024

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

The selectivity of chemical mechanical polishing (CMP) is successfully enhanced due to the modification of the film surface by ultra-high-dose ion implantation for the first time. The removal rate (RR) of CMP for SiO2 and Si3N4 films was changed by implanted ions. On the other hand, polycrystalline silicon (poly-Si) films had no change regardless of ion implantation. When C + is implanted at 3×10 16 ions/cm 2 into SiO2, the RR decreases by about 40% compared with that without implantation. However, no significant change was observed after the implantation of C + at 1×10 16 ions/cm 2 or Si + to SiO2 and poly-Si films. New findings about CMP mechanism that are against Borst's Langmuir-Hinshelwood model have been made when the film is modified by using high-dose implantation.

show abstract

Section: A Sio2 Filmmentioning

confidence: 89%