High-k La_xCe_yO_z for Passivation of Si Substrate

Abstract

High dielectric constant rare earth lanthanum cerium oxide (LaxCeyOz) films have been studied as the passivation layers for silicon substrate. Effects of post-deposition annealing time (15, 30, and 45 min) at 700°C towards capacitance-voltage characteristics of the films were investigated. As the annealing time was increased from 15 to 45 min, negative flatband voltage shift was observed, signifying the presence of positive charges in the samples. Interface trap density value calculated for the samples has shown to be the lowest for the film annealed for 45 min, owing to the presence of silicate interfacial layer to improve the overall interfacial quality.

Effect of Nitrogen Doping on Threshold Voltage in Amorphous Ga2Te3 for Application of Selector Devices

“…Then, the intersection of the lines with slopes of 1 and 2 is space charge limited voltage ( V SCL ) and the intersection of the lines with slopes of 2 and l + 1 is trap‐filled limited voltage ( V TFL ) in double‐logarithmic J–V. [ 32,34 ] The double‐logarithmic J–V plots of N‐doped a‐Ga 2 Te 3 show all the three distinctive regions in the subthreshold switching region, as shown in Figure a–d based on trap‐controlled SCLC fitting. [ 15 ] Region I seems to agree with the ohmic conduction ( J I ∝ V ) in which the density of thermally generated free carriers ( n 0 ) is larger than that of injected carriers ( n ) at V < V SCL , where V SCL is the transition voltage from region I to region II and n 0 = n at V = V SCL .…”

Multilevel Memristive GeTe Devices

“…The space charge limited transition voltage, V SCL , is found at the intersection between the linear regressions of the first two regions, whereas the trap‐filled limited transition voltage, V TFL , is defined at the intersection between the last two regions. [ 22,23 ] The first region (at low applied voltage) is controlled by the ohmic conduction ( I ∝ V ) mechanism. In the second region (at intermediate applied voltages), the discrete deep traps are filled and a SCLC ( I ∝ V 2 ) mechanism is present.…”