High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon

Ranjan, Kumud; Arulkumaran, S.; Ng, G. I.; Vicknesh, S.

doi:10.7567/apex.7.044102

Cited by 29 publications

(26 citation statements)

References 23 publications

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“…This comports with my intuition that in the limit that the device length-scale becomes large that steady-state effects will dominate the electron transport characteristics. A few representative experimental results are also depicted in Figure 5.1 [386][387][388][389][390][391][392][393]. It is seen that, in all cases, the optimized results place an upper-limit on these experimental electron transport results, as would be expected.…”

Section: Chapter 5: Conclusionmentioning

confidence: 55%

“…From Eq. (4.7), I am therefore able to plot the dependence of the upper bound for the cut-off frequency as a function of the device length-scale, L. In Figure 5.1 [386][387][388][389][390][391][392][393], I plot this dependence for the specific case of wurtzite GaN, these results being from Figure 7 of Foutz et al [131], this analysis being pursued by Foutz et al [132]. It should be noted that the result depicted here constitutes an improvement over the steady-state projections for device performance seen previously in Figure 4.2.…”

Section: Chapter 5: Conclusionmentioning

confidence: 99%

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Electron transport within the wurtzite and zinc-blende phases of gallium nitride and indium nitride

Siddiqua

O’Leary

2018

J Mater Sci: Mater Electron

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Wide energy gap semiconductors are broadly recognized as promising materials for novel electronic and opto-electronic device applications. As informed device design requires a firm grasp on the material properties of the underlying electronic materials, the electron transport that occurs within the wide energy gap semiconductors has been the focus of considerable study over the years. We review analyses of the electron transport within some wide energy gap semiconductors of current interest. In this thesis, I primarily focus on the electron transport that occurs within the wurtzite and zinc-blende phases of gallium nitride and indium nitride, these materials being of great current interest to the wide energy gap semiconductor community; indium nitride, while not a wide energy gap semiconductor of itself, is included as it is often alloyed with other wide energy gap semiconductors. The electron transport that occurs within zinc-blende gallium arsenide has also been considered. Most of the discussion focus on the steady-state and transient electron transport results obtained from the ensemble semi-classical three-valley Monte Carlo simulations of the electron transport within these materials.The evolution of the field, a survey of the current literature, and some applications for the results will also be featured. Based on this analysis, we have drawn the following conclusions. First, it is found that all of the velocityfield characteristics corresponding to the materials under investigation in this analysis exhibit peaks, regions of negative differential mobility, and regions of high-field saturation. Wurtzite Indium nitride, with its small electron effective mass, exhibits the highest peak electron drift velocity. The transient overshoot observed for the case of wurtzite Indium nitride is also found to be the most pronounced of all of the materials considered in this analysis. This suggests that the wurtzite phase of Indium nitride and its zinc-blende counterpart may offer great potential for future electron device applications. vi Rensselaer Polytechnic Institute, for example, was one of the first researchers to explore the wide energy gap semiconductors, GaN and InN, through the use of Monte Carlo electron transport simulations. In fact, some of his initial explorations into the nature of the electron transport within these materials were performed by him in concert with Dr. O'Leary. Dr. Shur and Dr. O'Leary have established a vigorous and active research collaboration, and the papers that I wrote within the scope of my doctoral studies were merely the latest of a large number of publications that have arisen from this collaboration. Dr. Shur commented on each manuscript, and made some suggestions in terms of interpreting the results. These definitely helped improve the clarity and effectiveness of my publications.

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Section: Chapter 5: Conclusionmentioning

confidence: 55%

Section: Chapter 5: Conclusionmentioning

confidence: 99%

Electron transport within the wurtzite and zinc-blende phases of gallium nitride and indium nitride

Siddiqua

O’Leary

2018

J Mater Sci: Mater Electron

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“…Figure10shows the comparison of J-FOM (= fT × BVgd) as a function of the gate length for various GaN-based HEMTs[20,21,[29][30][31][32][33][34][35][36][37][38][39][40][41][42][43]. The MIS-HEMTs that were fabricated in this study exhibited the J-FOM in the range between 5.57 and 10.67 THz•V, which are the state-of-the-art values reported for GaN-based HEMTs.…”

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confidence: 71%

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

et al. 2020

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This study investigated the effects of a thin aluminum oxynitride (AlOxNy) gate insulator on the electrical characteristics of AlGaN/GaN-on-SiC metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). The fabricated AlGaN/GaN-on-SiC MIS-HEMTs exhibited a significant reduction in gate leakage and off-state drain currents in comparison with the conventional Schottky-gate HEMTs, thus enhancing the breakdown voltage. The effects of gate recess were also investigated while using recessed MIS-HEMT configuration. The Johnson’s figures of merit (= fT × BVgd) for the fabricated MIS-HEMTs were found to be in the range of 5.57 to 10.76 THz·V, which is the state-of-the-art values for GaN-based HEMTs without a field plate. Various characterization methods were used to investigate the quality of the MIS and the recessed MIS interface.

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“…Table I presents a summary of some of the best reported GaN HEMTs with their JFOM on different substrates. As can be seen, AlGaN/GaN HEMTs exhibiting a JFOM over 8 THz-V, have been obtained on HR-Si [7,8]. Whereas, JFOM over 10 THz-V is also achieved on AlInN/GaN HEMTs [9]…”

Section: Introductionmentioning

confidence: 90%

AlInGaN/GaN HEMTs With High Johnson’s Figure-of-Merit on Low Resistivity Silicon Substrate

Sanyal

Lin

Wan

et al. 2021

IEEE J. Electron Devices Soc.

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High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon

Cited by 29 publications

References 23 publications

Electron transport within the wurtzite and zinc-blende phases of gallium nitride and indium nitride

Electron transport within the wurtzite and zinc-blende phases of gallium nitride and indium nitride

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

AlInGaN/GaN HEMTs With High Johnson’s Figure-of-Merit on Low Resistivity Silicon Substrate

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