AlInGaN/GaN HEMTs With High Johnson’s Figure-of-Merit on Low Resistivity Silicon Substrate

Sanyal, Indraneel; Lin, E. J.; Wan, Yu-Chen; Chen, Kun-Ming; Tu, Po-Min; Yeh, Ping-Cheng; Chyi, Jen‐Inn

doi:10.1109/jeds.2020.3043279

Cited by 13 publications

(6 citation statements)

References 27 publications

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“…This is due to the slightly higher breakdown voltage obtained for device 1 owing to the redistribution of the electric field due to the implementation of the split-gate design, as compared to device 2. Furthermore, Johnson's figure of merit (JFoM), which signifies the performance of a device for highfrequency applications [34], is also found to be notably higher, i.e. 127.7% for device 1 as compared to device 2.…”

Section: High-frequency Metricsmentioning

confidence: 99%

Design of a novel split-recessed-gate β-Ga₂O₃ MOSFET-based maximum-gain microwave amplifier

Goyal,

Patel,

Kaur

2024

J. Phys. D: Appl. Phys.

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In this study, a split recessed gate Ga2O3 MOSFET has been proposed for high frequency applications. Extensive simulations have been carried out using TCAD Silvaco to examine analog characteristics as well as critical high-frequency metrics of the proposed device. A comparison has been drawn with conventional recessed gate β – Ga2O3 MOSFET and it is demonstrated that the proposed device outperforms the conventional device in terms of high frequency metrics due to significantly lower parasitic capacitances and higher intrinsic gain. In addition to this, it has also been demonstrated that proposed device exhibits a substantial increase of 127.7 % in Johnson’s figure of merit, significantly higher i.e., 134.7 % higher Baliga’s high frequency figure of merit as well as 3.25 % increase in Baliga’s figure of merit as compared to conventional device.Furthermore, two port network analysis has been carried out for both the devices and it has been shown that the proposed device offers higher gain with a slight trade-off in the reflections at input/output ports. The scattering parameters have also been extracted and used to perform the stability analysis. It has been observed that the proposed device exhibits higher stability for the entire frequency range. Further, a maximum gain amplifier has been designed using the proposed device. An impressive gain of 11.04 dB has been demonstrated at an ultra-high frequency of 3 GHz.

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Section: High-frequency Metricsmentioning

confidence: 99%

Design of a novel split-recessed-gate β-Ga₂O₃ MOSFET-based maximum-gain microwave amplifier

Goyal,

Patel,

Kaur

2024

J. Phys. D: Appl. Phys.

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“…Recent research, such as Hrubisak et al’s work on liquid injection metal–organic chemical vapor deposition (MOCVD) growth of monoclinic β-Ga 2 O 3 films on 4H-SiC, Hu et al’s achievement of step-flow growth of β-Ga 2 O 3 films on off-axis 4H-SiC via LPCVD, and Xia et al’s extension to hexagonal phase-pure ε-Ga 2 O 3 films on 6H-SiC using MOCVD, has contributed to the understanding of Ga 2 O 3 growth dynamics on high thermal conductivity substrates. However, improvements are still needed to meet commercial standards, exemplified by commercial GaN on Si heteroepitaxy, where epilayer quality routinely exhibits XRD rocking curve fwhm values in the range of 0.1°–0.11°. , The best quality of β-Ga 2 O 3 on foreign substrates has been obtained on c-plane sapphire substrates, typically with fwhm values ranging from 0.6°–1°. − Further improvement in layer quality can be achieved by using offcut substrates. A better understanding of growth dynamics is crucial to achieve the highest quality of Ga 2 O 3 on high thermal conductivity substrates, such as diamond and SiC, for commercial applications.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamics of Ga₂O₃ Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition

Sanyal,

Nandi,

Cherns

et al. 2024

ACS Appl. Electron. Mater.

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Heteroepitaxy of gallium oxide (Ga 2 O 3 ) is gaining popularity to address the absence of p-type doping, limited thermal conductivity of Ga 2 O 3 epilayers, and toward realizing high-quality p-n heterojunction. During the growth of β-Ga 2 O 3 on 4H-SiC (0001) substrates using metal−organic chemical vapor deposition, we observed formation of incomplete, misoriented particles when the layer was grown at a temperature between 650 °C and 750 °C. We propose a thermodynamic model for Ga 2 O 3 heteroepitaxy on foreign substrates which shows that the energy cost of growing β-Ga 2 O 3 on 4H-SiC is slightly lower as compared to sapphire substrates, suggesting similar high-temperature growth as sapphire, typically in the range of 850 °C−950 °C, that can be used for the growth of β-Ga 2 O 3 on SiC. A two-step modified growth method was developed where the nucleation layer was grown at 750 °C followed by a buffer layer grown at various temperatures from 920 °C to 950 °C. 2θ−ω scan of X-ray diffraction (XRD) and transmission electron microscope images confirm the β-polymorph of Ga 2 O 3 with dominant peaks in the (−201) direction. The buffer layer grown at 950 °C using a "ramp-growth" technique exhibits root-mean-square surface roughness of 3 nm and full width of half maxima of XRD rocking curve as low as 0.79°, comparable to the most mature β-Ga 2 O 3 heteroepitaxy on sapphire, as predicted by the thermodynamic model. Finally, the interface energy of an average Ga 2 O 3 island grown on 4H-SiC is calculated to be 0.2 J/m 2 from the cross-section scanning transmission electron microscope image, following the Wulff-Kaishew theorem of the equilibrium island shape.

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“…Thus, we optimized the second Si 3 N 4 passivation thickness in the hybrid passivation structure to further increase its RF performance. Consequently, the various passivation structures in terms of

, on-resistance (

), and cut-off frequency (

) were evaluated using the standard lateral figure-of-merit (LFOM) (=

) and Johnson’s figure-of-merit (JFOM) (=

) [ 15 , 16 , 17 ].…”

Section: Introductionmentioning

confidence: 99%

Enhanced Operational Characteristics Attained by Applying HfO2 as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study

Choi,

Kang,

Kim

et al. 2023

Micromachines

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This study investigates the operating characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) by applying HfO2 as the passivation layer. Before analyzing HEMTs with various passivation structures, modeling parameters were derived from the measured data of fabricated HEMT with Si3N4 passivation to ensure the reliability of the simulation. Subsequently, we proposed new structures by dividing the single Si3N4 passivation into a bilayer (first and second) and applying HfO2 to the bilayer and first passivation layer only. Ultimately, we analyzed and compared the operational characteristics of the HEMTs considering the basic Si3N4, only HfO2, and HfO2/Si3N4 (hybrid) as passivation layers. The breakdown voltage of the AlGaN/GaN HEMT having only HfO2 passivation was improved by up to 19%, compared to the basic Si3N4 passivation structure, but the frequency characteristics deteriorated. In order to compensate for the degraded RF characteristics, we modified the second Si3N4 passivation thickness of the hybrid passivation structure from 150 nm to 450 nm. We confirmed that the hybrid passivation structure with 350-nm-thick second Si3N4 passivation not only improves the breakdown voltage by 15% but also secures RF performance. Consequently, Johnson’s figure-of-merit, which is commonly used to judge RF performance, was improved by up to 5% compared to the basic Si3N4 passivation structure.

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AlInGaN/GaN HEMTs With High Johnson’s Figure-of-Merit on Low Resistivity Silicon Substrate

Cited by 13 publications

References 27 publications

Design of a novel split-recessed-gate β-Ga₂O₃ MOSFET-based maximum-gain microwave amplifier

Design of a novel split-recessed-gate β-Ga₂O₃ MOSFET-based maximum-gain microwave amplifier

Thermodynamics of Ga₂O₃ Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition

Enhanced Operational Characteristics Attained by Applying HfO2 as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study

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AlInGaN/GaN HEMTs With High Johnson’s Figure-of-Merit on Low Resistivity Silicon Substrate

Cited by 13 publications

References 27 publications

Design of a novel split-recessed-gate β-Ga2O3 MOSFET-based maximum-gain microwave amplifier

Design of a novel split-recessed-gate β-Ga2O3 MOSFET-based maximum-gain microwave amplifier

Thermodynamics of Ga2O3 Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition

Enhanced Operational Characteristics Attained by Applying HfO2 as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study

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Product

Resources

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Design of a novel split-recessed-gate β-Ga₂O₃ MOSFET-based maximum-gain microwave amplifier

Design of a novel split-recessed-gate β-Ga₂O₃ MOSFET-based maximum-gain microwave amplifier

Thermodynamics of Ga₂O₃ Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition