2007
DOI: 10.1016/j.cap.2005.08.001
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High intensity photoluminescence of microcrystalline CsPbBr3 films: Evidence for enhanced stimulated emission at room temperature

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Cited by 62 publications
(53 citation statements)
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“…Our initial study focused on CsPbBr 3 nanowires, as previous reports suggest this composition is strongly photoluminescent (26,34) and capable of stimulated emission (29)(30)(31). Although we have already reported the synthesis of colloidal CsPbBr 3 nanowires (34), those nanowires are too narrow (∼20-nm diameter) to efficiently confine the 535-nm emission and are therefore unable to support photonic lasing (Fig.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Our initial study focused on CsPbBr 3 nanowires, as previous reports suggest this composition is strongly photoluminescent (26,34) and capable of stimulated emission (29)(30)(31). Although we have already reported the synthesis of colloidal CsPbBr 3 nanowires (34), those nanowires are too narrow (∼20-nm diameter) to efficiently confine the 535-nm emission and are therefore unable to support photonic lasing (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…With strikingly similar optical and electronic properties, cesium lead halide perovskites are favorable materials for laser gain media (26,27). Whereas early studies revealed wide stoichiometric emission wavelength tunability (28), stimulated emission for all-inorganic perovskites was not reported until 2007 in thin films of CsPbBr 3 (29,30). Recent reports have expanded the versatility of the cesium lead halides by demonstrating amplified spontaneous emission in a variety of CsPbX 3 compositions and alloys, as well as whispering gallery mode lasing in coated silica beads and microcrystals (31)(32)(33).…”
mentioning
confidence: 99%
“…Such experimentally obtained E b values are in well accordance with previous theoretical predicts of CsPbBr 3 QDs, but slightly higher than that of bulk CsPbBr 3 (35 meV), which should be due to quantum confi nement effect. [31][32][33] More importantly, these values are much higher than the thermal disturbance energy at RT (≈26 meV), and than that of GaN (25 meV), which ensures the generation of exitons at RT and their high-rate recombination, and hence induces outstanding PL properties, even stimulated emission at RT [ 12 ] t A t A t A( ) exp exp …”
Section: Mev Exciton Binding Energy and 46 Mev Optical Phononmentioning
confidence: 98%
“…[32] Improved performance was observed by modulating the precursor stoichiometry during thin-film formation with an excess of CsBr (CsBr:PbBr 2 = 2:1) showing nearly 300% improvement in luminescence over the stoichiometric compositions. Besides the increased thermal stability compared to the CH 3 NH 3 PbX 3 family, bulk CsPbBr 3 exhibits other attractive features for lightemitting applications, such as long PL life-time (≈2.5 μs) and electron mobility (≈10 3 cm 2 V −1 s −1 , comparable electron and hole mobility/life-time products, [45] small exciton binding energy (≈35 meV), [46] and potentially better ambient stability.…”
Section: Reviewmentioning
confidence: 99%