2003
DOI: 10.1016/s0039-6028(02)02575-x
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High-intensity atomic oxygen radical anion emission mechanism from 12CaO·7Al2O3 crystal surface

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Cited by 69 publications
(85 citation statements)
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“…Nearly pure O À ion emission from the surface was confirmed by mass spectroscopy. [30][31][32][33] This result is in clear contrast from the YSZ, which emits equimolar O À ions and electrons. When the sample was heated to %800 C and the applied field was increased to %1 kV cm À1 , the O À current density exceeded %1 mA cm À2 , which is three orders of magnitude higher than that obtained in the YSZ emitter.…”
Section: Formation In Cagesmentioning
confidence: 88%
“…Nearly pure O À ion emission from the surface was confirmed by mass spectroscopy. [30][31][32][33] This result is in clear contrast from the YSZ, which emits equimolar O À ions and electrons. When the sample was heated to %800 C and the applied field was increased to %1 kV cm À1 , the O À current density exceeded %1 mA cm À2 , which is three orders of magnitude higher than that obtained in the YSZ emitter.…”
Section: Formation In Cagesmentioning
confidence: 88%
“…We fabricated a high performance of field effect transistor [7] employing single-crystalline thin films of InGaO 3 (ZnO) 5 [8] as the active layer. The resulting transistors exhibit a field mobility of , 80 cm 2 (Vs) 21 , which is comparable to that in polycrystalline Is-FET. Furthermore, an amorphous p-type oxide semiconductor was found and an amorphous oxide pin-diode with good rectifying properties was fabricated just by depositing on glass substrates at room temperature [9].…”
Section: Introductionmentioning
confidence: 76%
“…Simultaneously, a drastic increase in the conductivity was observed along with the coloration. The conductivity increased from , 10 10 S cm 21 to 0.5 S cm 21 . The Seebeck coefficient of the conductive sample is negative (2 360 mVK 21 ), indicating n-type conduction.…”
Section: Active Oxygen Manipulation: C12a7:omentioning
confidence: 92%
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