The aim of this pa per is ap ply ing sta tis ti cal laws and en large ment law to de ter mine a re dundancy level of nanotechnology com put ers with a pre-given sta tis ti cal con fi dence. We have tested ra di a tion hard ness of MOS mem ory com po nents (com mer cial EPROM mem ory) using both Monte Carlo sim u la tion method and ex per i men tal pro ce dure. Then, by us ing the sta tis ti cal en large ment law, we have per formed the anal y sis of re dun dancy op ti mi za tion of MOS struc ture for nanotechnology com put ers, un der the in flu ence of back ground ra di a tion, and ob tained more than sat is fy ing re sults.