2006
DOI: 10.1016/j.snb.2006.01.043
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High H2 sensing performance in hydrogen trititanate-derived TiO2

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Cited by 28 publications
(11 citation statements)
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“…Le Bail et al [25] found the coexistence of three phases between 100 and 400 °C, which finally transformed to TiO 2 rutile at 400 °C. H.-S. Kim et al [27] found that at 400 °C only β-TiO 2 existed in the sample, at 600 °C the presence of TiO 2 anatase was observed, while rutile began to appear at 800 °C. S. Papp et al [32] observed the collapse of the layered structure of H 2 Ti 3 O 7 after heating the sample to temperatures between 250 and 700 °C, while above 700 °C a phase transformation to a mixture of anatase and rutile TiO 2 was observed.…”
Section: Introductionmentioning
confidence: 97%
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“…Le Bail et al [25] found the coexistence of three phases between 100 and 400 °C, which finally transformed to TiO 2 rutile at 400 °C. H.-S. Kim et al [27] found that at 400 °C only β-TiO 2 existed in the sample, at 600 °C the presence of TiO 2 anatase was observed, while rutile began to appear at 800 °C. S. Papp et al [32] observed the collapse of the layered structure of H 2 Ti 3 O 7 after heating the sample to temperatures between 250 and 700 °C, while above 700 °C a phase transformation to a mixture of anatase and rutile TiO 2 was observed.…”
Section: Introductionmentioning
confidence: 97%
“…Hydrogen trititanate in the form of crystalline powder with a ramsdellite-type structure [25] can be synthesized from layered crystalline Na 2 Ti 3 O 7 by the ion exchange of the interlayer sodium cations with H 3 O + ions [24]. Because of the high proton conductivity of H 2 Ti 3 O 7 , this material has been studied as a potential solid-oxide electrolyte for fuel cells [26] and as sensing material in hydrogen sensors [27].…”
Section: Introductionmentioning
confidence: 99%
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“…When the sensor is exposed to a reducing gas such as hydrogen, the hydrogen reacts with the absorbed oxygen species to form water and the electron is re-injected into the semiconductor to reduce the resistance. Several metal-oxide semiconductors have been used as gas-sensing materials such as tin oxide (SnO 2 ) (Korotcenko et al, 2001), tungsten trioxide (WO 3 ) (Kim et al, 2006), titanium oxide (TiO 2 ) (Smith et al, 1993) and zinc oxide (ZnO) (Tomchenko et al, 2003). In order to accelerate the reaction rate and increase the sensitivity, a catalyst Pd or Pt is usually deposited on the surface of the oxide semiconductor.…”
Section: Semiconductor Sensormentioning
confidence: 99%