High-gain wavelength-stabilized 1.55 μm InAs/InP(100) based lasers with reduced number of quantum dot active layers

Abstract

The effect of the number of InAs/InP quantum dot layers (QDLs) on the static parameters of 1.55 μm emitting lasers was studied in the range of 1–3 QDLs. Due to the high modal gain of Γg0 ≥ 15.5 cm−1 per QDL ground state lasing of lasers with only a single QDL could be achieved with 11 mW total output power. By optimizing the QDLs number and the cavity length, the temperature dependence of the emission wavelength can be intrinsically stabilized resulting in an ultra-low emission wavelength shift of 0.078 nm/K for a 590 μm long laser with 2 QDLs.

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

“…However, the significant reduction of size and shape dispersion (large inhomogeneous broadening) of these nanostructures due to selfassemble growth procedure still pose a challenge in achieving high quality epitaxial material and device performance. Currently, the size dispersion, characterized in terms of photoluminescence (PL) linewidth (full-width-at-half-maximum, FWHM), are ~20 meV at 10 K for Qdots [4] and ~50 meV at room temperature for Qdashes [5][6][7]. These values indicate further improvement is required to make it as competitive as the matured InAs/GaAs Qdots on GaAs substrate technology [1,2].…”

InP based 1.55 μm quantum dot materials and lasers for ultra-narrow linewidth applications

“…From those materials 100 µm wide broad area lasers were processed and evaluated with different cavity lengths. Record values of the modal gain could be evaluated with 15 -17 cm -1 per QD layer [12]. By tailoring the dot geometry (dot density, dot size, size fluctuations) the balance between loss (e.g., given by mirror losses) and gain can be influenced and the wavelength shift with temperature can be widely changed from 0.55 nm/K (QW laser) down to nearly zero (see Fig.…”

“…PL spectrum of QD layers. The inset show an 1 x 1 µm 2 atomic force microscope image of a similar QD test sample[12].…”

Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy

“…15 Wang et al reported that a 10 s GI caused red-shift of photoluminescence (PL) peaks and increased the InAs QD size using metal-organic chemical vapor deposition. 16 Although high performance InAs/InAlGaAs QD lasers grown on InP have been demonstrated by several groups using molecular beam epitaxy, [17][18][19] no studies have been reported about the effect of GI in the InAs/InAlGaAs QD structural and optical properties.…”