High-gain quantum-dot semiconductor optical amplifier for 1300 nm

Bakonyi, Z.; Shen, Hui; Onishchukov, G.; Lester, L. F.; Gray, A.L.; Newell, T.C.; Tünnermann, Andreas

doi:10.1109/jqe.2003.818306

Cited by 83 publications

(40 citation statements)

References 31 publications

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“…31 The fact that the PL integrated intensity is not drastically decreased as a result of the transition to a type-II band alignment is likely due to the Sb accumulation on top of the QDs, which localizes the holes very close to the QDs and increases the electron-hole wave function overlap in comparison to a standard type-II QD system.…”

Section: Regime Ii: From 1280 To 1500 Nmmentioning

confidence: 99%

GaAsSb-capped InAs quantum dots: From enlarged quantum dot height to alloy fluctuations

et al. 2010

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Please check the document version of this publication:• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: The Sb-induced changes in the optical properties of GaAsSb-capped InAs/GaAs quantum dots ͑QDs͒ are shown to be strongly correlated with structural changes. The observed redshift of the photoluminescence emission is shown to follow two different regimes. In the first regime, with Sb concentrations up to ϳ12%, the emission wavelength shifts up to ϳ1280 nm with a large enhancement of the luminescence characteristics. A structural analysis at the atomic scale by cross-sectional scanning tunneling microscopy shows that this enhancement arises from a gradual increase in QD height, which improves carrier confinement and reduces the sensitivity of the excitonic band gap to QD size fluctuations within the ensemble. The increased QD height results from the progressive suppression of QD decomposition during the capping process due to the presence of Sb atoms on the growth surface. In the second regime, with Sb concentrations above ϳ12%, the emission wavelength shifts up to ϳ1500 nm, but the luminescence characteristics progressively degrade with the Sb content. This degradation at high Sb contents occurs as a result of composition modulation in the capping layer and strain-induced Sb migration to the top of the QDs, together with a transition to a type-II band alignment.

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Section: Regime Ii: From 1280 To 1500 Nmmentioning

confidence: 99%

GaAsSb-capped InAs quantum dots: From enlarged quantum dot height to alloy fluctuations

et al. 2010

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“…More details are discussed in [18]. In comparison to the typical gain recovery time of MQW-SOAs of 100-200 ps related to carrier transport, QD-SOAs are about two orders of magnitude faster [19]. With a recently proposed approach based on two-photon absorption, also the residual capture time in QD SOAs might be reduced leading to further reduced pattern effects in high speed optical signal processing [20].…”

Section: High Speed Semiconductor Amplifiersmentioning

confidence: 99%

Semiconductor quantum dots devices: Recent advances and application prospects

Reithmaier

Somers

Kaiser

et al. 2006

Physica Status Solidi (b)

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“…During the last decade, the potential capabilities of QD-SOAs for use in all-optical signal processing and optical communication systems have been intensively studied. Among these capabilities, ultrafast gain recovery [1][2][3][4][5], high saturated output power [6,7], pattern-effect free signal amplification at high speeds up to 80 Gb/s [8][9][10], pattern-effect free XGMbased wavelength conversion at 160 Gb/s [11], capability of operation at Tb/s speeds in presence of a control signal [12], amplification of high bit rate multichannel signals [13,14], low noise figure [15], small dimensions, and integration with other optoelectronic devices such as laser diodes and optical modulators have great importance in any optoelectronic system.…”

Section: Introductionmentioning

confidence: 99%

Quantum-Dot Semiconductor Optical Amplifiers: State Space Model versus Rate Equation Model

Taleb

Abedi

Golmohammadi

2013

Advances in OptoElectronics

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A simple and accurate dynamic model for QD-SOAs is proposed. The proposed model is based on the state space theory, where by eliminating the distance dependence of the rate equation model of the QD-SOA; we derive a state space model for the device. A comparison is made between the rate equation model and the state space model under both steady state and transient regimes.Simulation results demonstrate that the derived state space model not only is much simpler and faster than the rate equation model, but also it is as accurate as the rate equation model.

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High-gain quantum-dot semiconductor optical amplifier for 1300 nm

Cited by 83 publications

References 31 publications

GaAsSb-capped InAs quantum dots: From enlarged quantum dot height to alloy fluctuations

GaAsSb-capped InAs quantum dots: From enlarged quantum dot height to alloy fluctuations

Semiconductor quantum dots devices: Recent advances and application prospects

Quantum-Dot Semiconductor Optical Amplifiers: State Space Model versus Rate Equation Model

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