High-gain, low-noise monolithic HEMT distributed amplifiers up to 60 GHz

Yuen, C.; Nishimoto, C.; Pao, Y.C.; Day, M. E.; Bandy, S.; Zdasiuk, G.

doi:10.1109/22.64588

Cited by 8 publications

(4 citation statements)

References 1 publication

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“…Actually, this informative work illustrated the advantages and disadvantages of the MOS against the BJT. Among other interesting events of the 1990s, you can observe the promotion of HEMT [32, 33, 36, 37, 39] in RF region.…”

Section: Uwb Lnamentioning

confidence: 99%

“…Most of the achievements in the 2000s were based on the CMOS [49, 50, 56, 57, 63–67, 69, 70, 72–74, 77, 82–84, 86, 87, 90–93, 95, 96, 98, 100, 101, 103–105, 107–117, 119–124, 127–131, 133–138, 140–142, 144, 145, 147–151], BiCMOS [47, 55, 59, 60, 62, 78–81, 85, 118, 143], and HEMT [53, 71, 88, 89, 97, 106, 152] integrated circuits. Since the 1980s, usually but not always, HEMT has been employed for the frequencies higher than 10 GHz [21, 24, 27, 32, 36, 37, 39, 71, 89…”

Section: Uwb Lnamentioning

confidence: 99%

“…The 1990s can be named ‘CMOS & BiCMOS Decade’, though the wide range of RF designs were rendered at that time [32–44]. The significance of the CMOS [41] and the BiCMOS [35, 38] was due to the capability of MOS in scaling (getting smaller in size during the next decades) [30], its characteristics as a voltage‐controlled device [45], and also the properties of BJT such as high voltage‐gain, high frequency‐range, and its ability to compete with other technologies in results [41].…”

Section: Uwb Lnamentioning

confidence: 99%

“…They proposed different topologies and techniques such as distortion cancellation and notch filter to remove the effects of blockers and interferers, noise cancellation and g m ‐boosting to decrease noise figure (NF), common gate (CG) to have the input impedance matching, and also inductive peaking and g m ‐boosting to achieve gain flatness. This article comprehensively illustrates UWB LNA, such a book chapter for trained readers, which has not been carried out before [1–50, 51–100, 101–150, 151–200, …”

Section: Introductionmentioning

confidence: 99%

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Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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To the best of the author's knowledge, several studies during 1960-2019 were carried out on wideband and ultrawideband LNAs just to render optimum LNAs for SAW-less Radio-Frequency Integrated Circuits (RFICs) but none of these works reviewed and taught the proceedings of these six decades, hence the lack of a comprehensive review is quite noticeable. This article specifically studies the challenges and solutions of designing UWB LNA by reviewing topologies and techniques such as inductive peaking, noise and distortion cancellation, g m -boosting, active inductor and notch filter. Its historical aspect illustrates when the idea of wideband LNA was born and how it changed to ultrawideband LNA, and its tutorial aspect discusses circuits and achievements to present optimum LNAs in Complementary MOS (CMOS), BiCMOS and High-Electron-Mobility Transistor (HEMT) technologies. This work describes the endeavours of engineers in reaching UWB LNA from narrowband LNA during six decades that have great importance as a chapter in understanding this topic because it teaches all topologies, techniques, circuits and related events in a historical narrative for trained readers who are not experts on this topic. | UWB LNA | In the 1960sWhere did the idea of 'transistorised wideband LNA' originate from? It seems that everything goes back to the 1960s when This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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Section: Uwb Lnamentioning

confidence: 99%

Section: Uwb Lnamentioning

confidence: 99%

Section: Uwb Lnamentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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Design of Low Noise Distributed Amplifier with Adjustable Gain Control in 0.15um GaAs PHEMT

Zhang¹,

Wang²,

Xu³

2011

Energy Procedia

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Design of a low noise distributed amplifier with adjustable gain control in 0.15 μm GaAs PHEMT

Zhang¹,

Wang²,

Xu³

et al. 2012

J. Semicond.

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A low noise distributed amplifier consisting of 9 gain cells is presented. The chip is fabricated with 0.15-m GaAs pseudomorphic high electron mobility transistor (PHEMT) technology from Win Semiconductor of Taiwan. A special optional gate bias technique is introduced to allow an adjustable gain control range of 10 dB. A novel cascode structure is adopted to extend the output voltage and bandwidth. The measurement results show that the amplifier gives an average gain of 15 dB with a gain flatness of ˙1 dB in the 2-20 GHz band. The noise figure is between 2 and 4.1 dB during the band from 2 to 20 GHz. The amplifier also provides 13.8 dBm of output power at a 1 dB gain compression point and 10.5 dBm of input third order intercept point (IIP3), which demonstrates the excellent performance of linearity. The power consumption is 300 mW with a supply of 5 V, and the chip area is 2.36 1.01 mm 2 .

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High-gain, low-noise monolithic HEMT distributed amplifiers up to 60 GHz

Cited by 8 publications

References 1 publication

Ultrawideband LNA 1960–2019: Review

Ultrawideband LNA 1960–2019: Review

Design of Low Noise Distributed Amplifier with Adjustable Gain Control in 0.15um GaAs PHEMT

Design of a low noise distributed amplifier with adjustable gain control in 0.15 μm GaAs PHEMT

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