High-gain, low-noise monolithic HEMT distributed amplifiers up to 60 GHz

Ultrawideband LNA 1960–2019: Review

“…The 1990s can be named 'CMOS & BiCMOS Decade', though the wide range of RF designs were rendered at that time [32][33][34][35][36][37][38][39][40][41][42][43][44]. The significance of the CMOS [41] and the BiCMOS [35,38] was due to the capability of MOS in scaling (getting smaller in size during the next decades) [30], its characteristics as a voltage-controlled device [45], and also the properties of BJT such as high voltage-gain, high frequency-range, and its ability to compete with other technologies in results [41].…”

“…Most of the achievements in the 2000s were based on the CMOS [49, 50, 56, 57, 63-67, 69, 70, 72-74, 77, 82-84, 86, 87, 90-93, 95, 96, 98, 100, 101, 103-105, 107-117, 119-124, 127-131, 133-138, 140-142, 144, 145, 147-151], BiC-MOS [47, 55, 59, 60, 62, 78-81, 85, 118, 143], and HEMT [53,71,88,89,97,106,152] integrated circuits. Since the 1980s, usually but not always, HEMT has been employed for the frequencies higher than 10 GHz [21,24,27,32,36,37,39,71,89,106,152] and on the other hand, CMOS and BiCMOS are applied for frequencies lower than 10 GHz [35, 38, 41, 47, 49, 50, 55-57, 60, 63-67, 69, 72-74, 77, 80-84, 86, 87, 90-93, 95, 96, 98, 100, 101, 103-105, 107-124, 128-138, 140, 142-145, 148-151]. The available exceptions to the author are [3,53,59,88,97,127,141], and [147].…”

“…Actually, this informative work illustrated the advantages and disadvantages of the MOS against the BJT. Among other interesting events of the 1990s, you can observe the promotion of HEMT [32, 33, 36, 37, 39] in RF region.…”

“…Most of the achievements in the 2000s were based on the CMOS [49, 50, 56, 57, 63–67, 69, 70, 72–74, 77, 82–84, 86, 87, 90–93, 95, 96, 98, 100, 101, 103–105, 107–117, 119–124, 127–131, 133–138, 140–142, 144, 145, 147–151], BiCMOS [47, 55, 59, 60, 62, 78–81, 85, 118, 143], and HEMT [53, 71, 88, 89, 97, 106, 152] integrated circuits. Since the 1980s, usually but not always, HEMT has been employed for the frequencies higher than 10 GHz [21, 24, 27, 32, 36, 37, 39, 71, 89…”

“…They proposed different topologies and techniques such as distortion cancellation and notch filter to remove the effects of blockers and interferers, noise cancellation and g m ‐boosting to decrease noise figure (NF), common gate (CG) to have the input impedance matching, and also inductive peaking and g m ‐boosting to achieve gain flatness. This article comprehensively illustrates UWB LNA, such a book chapter for trained readers, which has not been carried out before [1–50, 51–100, 101–150, 151–200, …”