In this paper, we propose a novel operation of a MOSFET that is suitable for ultra-low voltage (0.6 V and below) VLSI circuits. Experimental demonstration was carried out in a Silicon-On-Insulator (SOI) technology. In this device, the threshold voltage of the device is a function of its gate voltage, i.e., as the gate voltage increases the threshold voltage (Vt) drops resulting in a much higher current drive than standard MOSFET for low-power supply voltages. On the other hand, Vt is high at Vgs = 0, therefore the leakage current is low. We provide extensive experimental results and two-dimensional (2-D) device and mixed-mode simulations to analyze this device and compare its performance with a standard MOSFET. These results verify excellent inverter dc characteristics down to V dd = 0:2 V, and good ring oscillator performance down to 0.3 V for Dynamic Threshold-Voltage MOSFET (DTMOS). engineering from the Massachusetts Institute of Technology, Cambridge, in 1975, and the M.S.