The effect of interfacial traps at the organic semiconductor and insulating oxide interface in a pentacene organic field-effect transistor was examined by both DC and AC methods, represented by the steady-state current-voltage condition and impedance spectroscopy, respectively. A comparative technique for the observation of the effects of low and high trap densities on carrier injection and transport was proposed. An equivalent circuit based on the transmission line model was used to model the system, and the measured results across various biases showed very good fit to this model. We found that for high trap densities, the contact resistance increased markedly, and consequently affected the transport properties, which led to the disappearance of the typical space-charge-limited condition. The mobility under AC bias was also much lower than that under DC bias, which was likely due to the trapping-and-release process involved in the AC bias but not in the DC bias. #
The bipolar enhanced transistor action (BETA)-MOSFET, operating in a mixture of FET mode and bipolar mode, has been fabricated. Unlike the lateral bipolar transistor, its base current can be automatically controlled by the gate voltage. Hence, the device operating voltage can be in a wide range and is a maximum of -4 V. It is confirmed that the device can be treated as a high-performance MOS-FET in circuit analysis. Thee types of device structures, with a gate-substrate contact that includes an ultrathin-film tunnel junction, are fabricated and evaluated. In the p-channel BETA-MOSFET, the drain current and the maximum transconductance are about four times those of the conventional MOSFET while maintaining the same threshold voltage. This result implies that the BETA-MOSFET with a gate length of 1.3 pm exhibits a superior performance equivalent to a 0.1-pm p-MOSFET. 0 1997 Scripta Technica, Inc. Electron Comm Jpn Pt 2,79(12): [47][48][49][50][51][52][53] 1996
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