High Gain Double Gate Vacuum Emission Transistor with low Leakage Current

Vacuum Tunneling Transistor with Nano Vacuum Chamber for Harsh Environments

“…The I gs level can be neglected, and it does not greatly affect device operation since it is too small compared with the drain current ( I ds ). The I gs is dependent on the position of the gate relative to the source and drain terminal which means it was affected by the overlap dimension of the source, drain, and gate. , The increased I gs causes device performance degradation and increases power consumption. To reduce the I gs , the vacuum tunneling transistor was fabricated with a small overlap dimension and the gate electrode was positioned in the center of the source and drain electrode with a symmetrical structure.…”

“…4,6,19 Therefore, the vacuum device can have high-speed switching with high stability. 20,21 Additionally, a vacuum tunneling device can be more robust in harsh environmental conditions such as a wide driving temperature or radiation conditions due to the empty channel. 5,22,23 In the past, vacuum tubes were dominantly used as a key component of electronic circuits.…”

“…Old vacuum tube technology can point toward a direction to resolve these issues. , A vacuum is one of the ideal tunneling barriers, and it is almost free from defects. Due to the absence of trap sites and electron interference in the ideal vacuum, the vacuum device exhibits ballistic transport properties. ,, Therefore, the vacuum device can have high-speed switching with high stability. , Additionally, a vacuum tunneling device can be more robust in harsh environmental conditions such as a wide driving temperature or radiation conditions due to the empty channel. ,, In the past, vacuum tubes were dominantly used as a key component of electronic circuits. − However, despite these advantages, the old vacuum tubes have some limitations. They are difficult to use in large-scale integrated circuits due to the large sealing volume and poor durability of glass sealing and consequently were replaced by semiconductor devices and integrated circuit (IC) design.…”