High-gain coupled InGaAs quantum well InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure diode laser operation

Abstract

Coupled InP quantum-dot InGaP quantum well InP-InGaP-In(AlGa)P-InAlP heterostructure diode laser operation Appl. Phys. Lett. 79, 3215 (2001); 10.1063/1.1416158Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers Short-wavelength laser diodes based on AlInAs/AlGaAs self-assembled quantum dots

Evolution of bimodal size-distribution on InAs coverage variation in as-grown InAs/GaAs quantum-dot heterostructures

“…Self-assembled quantum dot (QD) and its related heterostructures have been receiving considerable attention as potential semiconductor nanostructures applicable to QD-based optoelectronic devices such as laser diodes [1], infrared photodetectors [2,3]. By virtue of unique zerodimensional features and strong confinement of the carrier wave functions in QDs, the structures have emerged as scientifically important systems not only in device applications but also in fundamental studies.…”

Observations of near-zero linewidth enhancement factor in a quantum-well coupled quantum-dot laser

“…These emission wavelengths agree with independently measured spectra of lasers with the same structure. 1 The measured gain spectra show that the lasing state occurs at an energy slightly above the QD ground state. The emission from excited state of the laser can be attributed to band filling and inhomogeneous broadening of the QD states.…”

“…A recent proposal of a QD laser which employs an auxiliary quantum well ͑QW͒ is shown to have better performance in reducing the threshold current density as compared to a stand-alone QD layer within a laser. 1 The QW, coupled through a very thin barrier to the QD layer, improves carrier collection and lateral distribution while carriers tunnel from the QW to the QDs. 2 Furthermore, this tunneling injection QW-QD structure gives better QD self-organization during growth, which creates a higher density of self-assembled QDs with a significant improvement in QD size distributions.…”

Tunneling-injection of electrons and holes into quantum dots: A tool for high-power lasing

“…12 Using tunnelinginjection of both electrons and holes, the highest reported ground-state gain for a single-layer InAs QD laser was achieved, thus allowing for ground-state lasing in shortcavity devices. 13 A more symmetrical gain shape and a smaller refractive index change at the peak gain wavelength were reported for a tunneling-injection laser. 15 Here, we study the potential of tunneling-injection of both electrons and holes into QDs for high-power operation and develop an extended model for a realistic device.…”

“…9-11, to suppress the recombination outside QDs and thus to improve the temperature-stability of the laser, tunneling-injection of both electrons and holes into QDs was proposed from two separate QWs. There have been recent experimental developments [12][13][14][15] related to this concept.…”