High gain broadband photoconductor based on amorphous Ga₂O₃ and suppression of persistent photoconductivity

Abstract

In this work, a high gain broadband photoconductor based on a wide bandgap amorphous gallium oxide film was reported. Meanwhile, a novel short-time heating method was demonstrated to effectively suppress the PPC effect.

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

“…Zhou et al. [ 235 ] have reported the suppression of PPC by using a novel “thermal relaxation” (TR) process of heating the PD for a short time on a hot plate. The light irradiation can ionize the neutral oxygen vacancy ( V o ) states to the shallow donor states ( V o 2+ ) which have long lifetimes before their recombination with electrons.…”

A high responsivity and controllable recovery ultraviolet detector based on a WO3 gate AlGaN/GaN heterostructure with an integrated micro-heater

“…On the other hand, the neutral vacancy can be ionized to the shallow donor state under light illumination. 52 And the electrons in the band tail states are also excited to the conduction band. Hence, the drain-source current of the photodetector is increased under UV illumination.…”

“…Zhou et al demonstrated that the ''thermal relaxation'' process can effectively reduce the recovery time of an a-Ga 2 O 3 detector from hours to seconds. 52 But the thermal relaxation process required the detector to be placed on a hot plate for heating and then removed to a heat sink for cooling. These operations may make the detector unsuitable for practical application.…”

Suspended tungsten trioxide (WO3) gate AlGaN/GaN heterostructure deep ultraviolet detectors with integrated micro-heater

“…The decay time is about 450 s at V H =0 V (temperature was about 20 ℃), and is suppressed to about 170 s when the photodetector is heated to approximately 150 ℃ at V H =4 V (∼280 mW). The decay time could be further reduced by increasing the micro-heater voltage (temperature) or a short time heating process (thermal relaxion) [27]. With the increasing temperature, electrons get more thermal energy, and the electron capture rate increases, reducing the decay times of device [21].…”