High-Frequency Scalable Electrical Model and Analysis of a Through Silicon Via (TSV)

Kim, Joohee; Pak, Jun So; Cho, Jonghyun; Song, Eakhwan; Cho, Jeonghyeon; Kim, Heegon; Song, Taigon; Lee, Jun-Ho; Lee, Hyungdong; Park, Kunwoo; Yang, Seung-Taek; Suh, Min-Suk; Byun, Kwang-Yoo; Kim, Joungho

doi:10.1109/tcpmt.2010.2101890

Cited by 394 publications

(2 citation statements)

References 13 publications

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“…45,39 In the following, we discuss the signal integrity consequences of the RDL corrosion on the capacitance-dominated TSV enabled interconnects structures. 46 The Figure 13 pattern eye diagram of (A) calibration substrate, (B) "as received" to (C) highly resistive DUT after EM test (6 days under 100 mA at 290 • C stress). In the unstressed test devices, time domain 10-Gbps pseudorandom bit sequence (PRBS) can be propagated without significant distortion.…”

Section: Resultsmentioning

confidence: 99%

Microwave Monitoring of Atmospheric Corrosion of Interconnects

Amoah

Veksler

Sunday

et al. 2018

ECS J. Solid State Sci. Technol.

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Traditional metrology has been unable to adequately address the reliability needs of emerging integrated circuits at the nano scale; thus, new metrology and techniques are needed. In this paper, we use microwave propagation characteristics (insertion loss and dispersion) to study the atmospheric interconnect corrosion under accelerated stress conditions. The results presented in this work indicate that the corrosion resilience of the test device is limited by the thermal aging of the passivation layer.

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Section: Resultsmentioning

confidence: 99%

Microwave Monitoring of Atmospheric Corrosion of Interconnects

Amoah

Veksler

Sunday

et al. 2018

ECS J. Solid State Sci. Technol.

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“…The changes in the DUT failure rate with thermal cycling is similar of the in-service changes in characteristic product failure distribution, and are similar to effects of postprocessing anneals and product burn-in. For the devices studied in this work, the chemical transformations are more related to changes in the dielectric than to the metal fill, as TSV RF characteristics at low frequency (< 1 GHz), have been shown to be dictated by the capacitance if the isolation liner (17).…”

Section: Discussionmentioning

confidence: 99%

(Invited) Broadband Spectroscopic Characterization of Electrically Active Defects in Dielectrics: Monitoring the in-Service Evolution of Dialectics in Integrated System

Obeng¹,

Okoro²,

Amoah³

et al. 2016

ECS Trans.

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Emerging nanoelectronics are been hindered by reliability challenges such as stress related failures. The chemistry and physics of the materials play crucial roles in the changes in the reliability over time, especially in low operating voltage devices which are fabricated using low temperatures processes. The low-temperature-processed materials are metastable due to the presence of reactive metastable intermediates from the precursors, and incomplete reactions within the films that result in electrically active defects in the “as deposited” films. Metrology is thus needed for the accurate quantification of the reliability impact of these defects in integrated systems. In this paper, we discuss the use of broadband microwave to detect, characterize and monitor the evolution of active defect in low-temperature processed dielectric films under simulated use conditions. The impact of thermal exposure on the behavior of electrical defects shed light on the chemical changes occurring within the dielectric films during use.

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Electrical modeling of carbon nanotube‐based shielded through‐silicon vias for three‐dimensional integrated circuits

Zhao

et al. 2020

Int J Numerical Modelling

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In this article, two kinds of shielded carbon nanotube (CNT) through-silicon vias (TSV) are proposed and investigated for high-density three-dimensional integrated circuits (3-D ICs). First, vertical aligned CNT array is inserted into a single hole, and two isolated metal pads, that is, the central circular and outer annular pads, are deposited onto the surface to make distinct conduction paths. The shielded CNT TSV, which can also be named as coaxial TSV, is formed, with the semiconducting CNTs utilized to suppress lateral conductance. Based on a similar concept, the shielded differential CNT TSV is developed. By virtue of the proposed shielded CNT TSVs, the chip area can be saved significantly. The equivalent circuit models are established for the proposed shielded CNT TSVs. A passive equalizer is designed to improve the signal quality for shielded differential CNT TSV. Finally, the potential applications of the proposed TSVs in 3-D IC power distribution network design are investigated.

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High-Frequency Scalable Electrical Model and Analysis of a Through Silicon Via (TSV)

Cited by 394 publications

References 13 publications

Microwave Monitoring of Atmospheric Corrosion of Interconnects

Microwave Monitoring of Atmospheric Corrosion of Interconnects

(Invited) Broadband Spectroscopic Characterization of Electrically Active Defects in Dielectrics: Monitoring the in-Service Evolution of Dialectics in Integrated System

Electrical modeling of carbon nanotube‐based shielded through‐silicon vias for three‐dimensional integrated circuits

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