High-Frequency Performance Study of CNTFET-Based Amplifiers

Ramos-Silva, Javier N.; Pacheco‐Sanchez, Aníbal; Diaz-Albarran, L.M.; Rodriguez-Mendez, Luis M.; Enciso-Aguilar, M.; Schröter, M.; Ramírez‐García, Eloy

doi:10.1109/tnano.2020.2978816

Cited by 12 publications

(11 citation statements)

References 27 publications

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“…Due to the difficulties of fabricating integrated RF circuits, a simulation based study was recently performed based on the compact model CCAM [14] that was calibrated on the measurements of [12]. Integrated HF CNTFET amplifiers with feedback and matching assuming realistic quality factors were designed in [126] for comparison with 130 nm RF-CMOS, assuming the same passives (i.e., BEOL), gate width and channel length. With the presently achievable low tube density of 10/μm and drain saturation current of about 15 μA, a double-stage 2.4 GHz LNA achieves ≈10 dB gain, 2.2 dB minimum noise figure and ≈15 dBm OIP 3 at a power consumption of 30 mW.…”

Section: Rf Circuitsmentioning

confidence: 99%

CNTFET Technology for RF Applications: Review and Future Perspective

et al. 2021

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RF CNTFETs are one of the most promising devices for surpassing incumbent RF-CMOS technology in the near future. Experimental proof of concept that outperformed Si CMOS at the 130 nm technology has already been achieved with a vast potential for improvements. This review compiles and compares the different CNT integration technologies, the achieved RF results as well as demonstrated RF circuits. Moreover, it suggests approaches to enhance the RF performance of CNTFETs further to allow more profound CNTFET based systems e.g., on flexible substrates, highly dense 3D stacks, heterogeneously combined with incumbent technologies or an all-CNT system on a chip.

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Section: Rf Circuitsmentioning

confidence: 99%

CNTFET Technology for RF Applications: Review and Future Perspective

et al. 2021

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“…Discussions on each model parameter and the physics behind each of them have been provided in [23], [24]. High-frequency noise modules, described elsewhere [28] have been activated in this work. The compact model has been calibrated (including both intrinsic part and parasitics) to hysteresis-free DC and dynamic experimental data [23], [25] from a fabricated top-gate multi-tube (MT) CNTFET technology [26], hence, the model used here is directly related to a manufacturable optimized device technology 1 .…”

Section: Compact Model and Device Descriptionmentioning

confidence: 99%

“…CNTFET-based RF applications have been already developed using this technology [26], [29]- [31]. HF performance projections for amplifiers using the considered CNTFET technology have been developed using CCAM [27], [28], however, the ambipolarity features of CNTFETs have not been exploited in such works. The reference device considered here has a channel length of 700 nm and a top-gate length of 250 nm, a total of eight gate fingers, 50 µm of width each, yielding a device total width of 400 µm.…”

Section: Compact Model and Device Descriptionmentioning

confidence: 99%

Multifunctional high-frequency circuit capabilities of ambipolar carbon nanotube FETs

Ramos-Silva,

Pacheco-Sanchez,

Ramirez-Garcia

et al. 2021

Preprint

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An experimentally-calibrated carbon nanotube compact transistor model has been used here to design two high-frequency (HF) circuits with two different functionalities each: a phase configurable amplifier (PCA) and a frequency configurable amplifier (FCA). The former design involves an in-phase amplifier and an inverting amplifier while the latter design embraces a frequency doubler as well as a distinct inverting amplifier. The specific functionality selection of each of the two HF circuit designs is enabled mainly by the inherent ambipolar feature at a device level. Furthermore, at a circuit level the matching networks are the same regardless the operation mode. In-phase and inverting amplification are enabled in the PCA by switching the gate-to-source voltage (VGS) from −0.3 V to 0.9 V while the drain-to-source voltage (VDS) remains at 3 V. By designing carefully the matching and stability networks, power gains of ∼4.5 dB and ∼6.7 dB at 2.4 GHz for the in-phase and inverting operation mode have been achieved, respectively. The FCA, in its frequency doubler operation mode, exhibits ∼20 dBc of fundamental-harmonic suppression at 2.4 GHz when an input signal at 1.2 GHz is considered. This frequency doubler functionality is enabled at VGS = 0.3 V, whereas at VGS = 0.9 V amplification of ∼4.5 dB is obtained while VDS remains at 3 V in both cases. In both configurable circuits the stabilization and matching networks are the same regardless the bias-chosen operation mode. The circuits performance degradation due to metallic tubes in the device channel is studied as well as the impact of non-ideal inductors in each design. PCA and FCA operation modes are further exploited in high-frequency modulators.

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“…The contribution of metallic tubes has been turned-off for this study in order to work with the bestcase scenario. The bias point has been chosen at V GS = 1 V and V DS = 3 V since an optimal high-frequency performance has been found out for this technology under such conditions [12]. The transit frequency (f t ) and maximum oscillation frequency (f max ) obtained with the reference model for the considered DC bias point are 9.8 GHz and 27.9 GHz, respectively.…”

Section: Initial Reference Datamentioning

confidence: 99%

Small-signal parameters extraction and noise analysis of CNTFETs

Ramos-Silva

Pacheco‐Sanchez

Enciso-Aguilar³

et al. 2020

Semicond. Sci. Technol.

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The use of carbon nanotube (CNT) field-effect transistors (FETs) in microwave circuit design requires an appropriate, immediate and efficient description of their performance. This work describes a technique to extract the parameters of an electrical equivalent circuit for CNTFETs. The equivalent circuit is used to model the dynamic and noise performance at low-and highfrequency of different CNTFET technologies, considering extrinsic and intrinsic device parameters as well as the contact resistance. The estimation of the contact resistance at the metal/CNTs interfaces is obtained from a Y-function based extraction method. The noise model includes four noise sources: thermal noise, thermal channel noise, shot channel noise and flicker noise. The proposed model is compared with a compact model calibrated to hysteresis-free experimental data from a high-frequency multi-tube (MT)-CNTFET technology. Additionally, it has been applied to experimental data from another fabricated MT-CNTFET technology. The comparison in both cases shows a good agreement between reference data (simulation and experimental) and results from the proposed model. Low-and high-frequency noise projections of the fabricated reference device are further studied. Noise results from both studied technologies show that shot noise mainly contributes to the total noise due to the presence of Schottky barriers at contacts and along the channel.

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High-Frequency Performance Study of CNTFET-Based Amplifiers

Cited by 12 publications

References 27 publications

CNTFET Technology for RF Applications: Review and Future Perspective

CNTFET Technology for RF Applications: Review and Future Perspective

Multifunctional high-frequency circuit capabilities of ambipolar carbon nanotube FETs

Small-signal parameters extraction and noise analysis of CNTFETs

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