High-frequency performance of scaled carbon nanotube array field-effect transistors

Steiner, M.; Engel, Michael; Lin, Yu-Kun; Wu, Yanqing; Jenkins, K.A.; Farmer, Damon B.; Humes, Jefford; Yoder, Nathan L.; Seo, Jung Woo T.; Green, Alexander A.; Hersam, Mark C.; Krupke, Ralph; Avouris, Phaedon

doi:10.1063/1.4742325

Cited by 102 publications

(97 citation statements)

References 25 publications

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“…As shown in Fig. 4d, the extrinsic cutoff frequency f T and maximum oscillation frequency f MAX achieved are 5.13 and 11.33 GHz, respectively, which are comparable to the best performance of SWNT array-based RF transistors 28 . The intrinsic f T and f MAX of our RF transistor are 6.94 and 14.01 GHz, respectively, after the de-embedding process.…”

Section: Resultssupporting

confidence: 49%

“…Experimental and theoretical works have demonstrated that the densealigned SWNT arrays are important and desirable for the applications of nanotube-based electronics, such as ICs and radio frequency (RF) electronics 27,28 . To evaluate the electrical performance of such ultra-high-density-aligned SWNT arrays, top-gated field effect transistors (FET) based on our as-grown SWNT arrays were fabricated directly on the growth substrate, and the electrical transport measurements were carried out in both d.c. and a.c. domains.…”

Section: Resultsmentioning

confidence: 99%

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Growth of high-density horizontally aligned SWNT arrays using Trojan catalysts

et al. 2015

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Single-walled carbon nanotube (SWNT)-based electronics have been regarded as one of the most promising candidate technologies to replace or supplement silicon-based electronics in the future. These applications require high-density horizontally aligned SWNT arrays. During the past decade, significant efforts have been directed towards growth of high-density SWNT arrays. However, obtaining SWNT arrays with suitable density and quality still remains a big challenge. Herein, we develop a rational approach to grow SWNT arrays with ultra-high density using Trojan catalysts. The density can be as high as 130 SWNTs mm À 1 . Field-effect transistors fabricated with our SWNT arrays exhibit a record drive current density of À 467.09 mA mm À 1 and an on-conductance of 233.55 mS mm À 1 . Radio frequency transistors fabricated on these samples exhibit high intrinsic f T and f MAX of 6.94 and 14.01 GHz, respectively. These results confirm our high-density SWNT arrays are strong candidates for applications in electronics.

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Section: Resultssupporting

confidence: 49%

Section: Resultsmentioning

confidence: 99%

Growth of high-density horizontally aligned SWNT arrays using Trojan catalysts

et al. 2015

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“…T he extraordinary electrical properties [1][2][3] of semiconducting single-walled carbon nanotubes (s-SWNTs) make them uniquely attractive for use in logic transistors/circuits [4][5][6][7][8][9][10] , radiofrequency (RF) transistors [11][12][13][14][15][16] , optoelectronic devices [17][18][19] and sensors [20][21][22] . The required horizontally aligned array configurations in SWNTs are possible through chemical vapour deposition (CVD)-based growth on quartz substrates 23,24 .…”

mentioning

confidence: 99%

Microwave purification of large-area horizontally aligned arrays of single-walled carbon nanotubes

et al. 2014

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Recent progress in the field of single-walled carbon nanotubes (SWNTs) significantly enhances the potential for practical use of this remarkable class of material in advanced electronic and sensor devices. One of the most daunting challenges is in creating large-area, perfectly aligned arrays of purely semiconducting SWNTs (s-SWNTs). Here we introduce a simple, scalable, large-area scheme that achieves this goal through microwave irradiation of aligned SWNTs grown on quartz substrates. Microstrip dipole antennas of low work-function metals concentrate the microwaves and selectively couple them into only the metallic SWNTs (m-SWNTs). The result allows for complete removal of all m-SWNTs, as revealed through systematic experimental and computational studies of the process. As one demonstration of the effectiveness, implementing this method on large arrays consisting of B20,000 SWNTs completely removes all of the m-SWNTs (B7,000) to yield a purity of s-SWNTs that corresponds, quantitatively, to at least to 99.9925% and likely significantly higher.

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“…The important feature of this setup compared with conventional planar dielectrophoresis is that all the microelectrodes patterned on top of a thin 10-nm-thick thermal silicon oxide are wired together, while the underlying grounded silicon substrate serves as the counter electrode. Metal electrodes are further protected with a thin, c.a.B8 nm, layer of Al 2 O 3 deposited by atomic layer deposition to avoid potential material issues such as electromigration associated with heat dissipation during dielectrophoresis 25 . A few drops of dialysed SDS-nanotube suspension are applied onto the chip as the nanotube reservoir.…”

Section: Resultsmentioning

confidence: 99%

Fringing-field dielectrophoretic assembly of ultrahigh-density semiconducting nanotube arrays with a self-limited pitch

2014

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One key challenge of realizing practical high-performance electronic devices based on singlewalled carbon nanotubes is to produce electronically pure nanotube arrays with both a minuscule and uniform inter-tube pitch for sufficient device-packing density and homogeneity. Here we develop a method in which the alternating voltage-fringing electric field formed between surface microelectrodes and the substrate is utilized to assemble semiconducting nanotubes into well-aligned, ultrahigh-density and submonolayered arrays, with a consistent pitch as small as 21±6 nm determined by a self-limiting mechanism, based on the unique field focusing and screening effects of the fringing field. Field-effect transistors based on such nanotube arrays exhibit record high device transconductance (450 mS mm À 1 ) and decent on current per nanotube (B1 mA per tube) together with high on/off ratios at a drain bias of À 1 V.

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High-frequency performance of scaled carbon nanotube array field-effect transistors

Cited by 102 publications

References 25 publications

Growth of high-density horizontally aligned SWNT arrays using Trojan catalysts

Growth of high-density horizontally aligned SWNT arrays using Trojan catalysts

Microwave purification of large-area horizontally aligned arrays of single-walled carbon nanotubes

Fringing-field dielectrophoretic assembly of ultrahigh-density semiconducting nanotube arrays with a self-limited pitch

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