High frequency interconnects on silicon substrates

A High Linearity 30-GHz Range SiGe Differential Power Amplifier IC

“…The given SiGe process has a silicon substrate that is quite conductive (p = 20 Q-cm) and hence dielectric loss is a major concern. There are two potential choices that are widely used for integrated circuit design: microstrip (MS) and coplanar waveguide (CPW) [7]. In case of lossy substrate, thin-film microstrip (TFMS) are usually used [7].…”

“…There are two potential choices that are widely used for integrated circuit design: microstrip (MS) and coplanar waveguide (CPW) [7]. In case of lossy substrate, thin-film microstrip (TFMS) are usually used [7]. However, TFMS has significantly less distance between the top conductor plane and the ground plane.…”

Optimally designed membrane-supported grounded CPW structure for submillimeter-wave applications

“…Such applications include fabrication of high-Q filters, resonators, and corporate feed of antenna arrays. This issue is especially important at submillimeter wave region as the dimensions have to be physically small, skin depth is very small, and dielectric loss tangent of the substrate becomes high [1][2][3][4][5][6][7].…”

Design and Development of Millimeter-Wave Micromachined Patch Antennas

“…Here, the bulk silicon material is removed underneath the patch radiator to synthesize a locally low-dielectric constant (ε r ~ 1) region around the antenna, as shown in Figure 1a. The second problem is overcome by using a high-resistivity silicon (HRS) substrate [3], where the losses due to the substrate…”