A High Linearity 30-GHz Range SiGe Differential Power Amplifier IC

Haque, T.; Studtmann, G.D.; Raman, Sanjay

doi:10.1109/smic.2007.322783

Cited by 4 publications

(4 citation statements)

References 9 publications

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“…To validate the design, the top chip was chosen to be a previously-designed CPW-based 30 GHz BiCMOS power amplifier chip [7]. The power amplifier chip is processed in the IBM 8HP technology.…”

Section: Designmentioning

confidence: 99%

Vertical RF Transition with Mechanical Fit for Three-Dimensional Heterogeneous Integration

Chen¹,

Wood²,

Raman³

et al. 2008

2008 European Microwave Integrated Circuit Conference

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This paper presents the design, simulation and measurement of a vertical interconnect with mechanical fit for three-dimensional heterogeneous integration. The mechanical fit is a strategy employing interlocking SU-8 structures to transition between flip-chip style stacked chips through vertical CPW transmission lines. The mechanical fit is introduced in this paper to reduce flip-chip alignment difficulty and increase the reliability of the interconnects. This paper also describes a process for using pre-fabricated active ICs in a mechanical fit vertical configuration. Experimental results show excellent RF performance up to 50 GHz, with extremely low insertion loss (better than 0.25 dB at 40 GHz per transition). The transitions have been fabricated and tested for 380 µm-thick silicon substrates with passive components and experiments are being conducted on active components.

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Section: Designmentioning

confidence: 99%

Vertical RF Transition with Mechanical Fit for Three-Dimensional Heterogeneous Integration

Chen¹,

Wood²,

Raman³

et al. 2008

2008 European Microwave Integrated Circuit Conference

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“…The resistance RL will be the input impedance of the matching section that due to high gain, higher fT, higher breakdown voltage at transforms this low resistance to a value up to 50 Q. comparable fT. The SiGe HBTs are used for the PA design, The values of the amplifier's components are chosen such will be presented here.will be presented here.~~~~~t hat v, satisfies the three conditions [7].Most power amplifiers which are being designed and published use differential output structure [2]- [4]. There are number of benefits for using differential output signals.…”

mentioning

confidence: 99%

“…Most power amplifiers which are being designed and published use differential output structure [2]- [4]. There are number of benefits for using differential output signals.…”

mentioning

confidence: 99%

Switching-Mode Differential Class-B Amplifier for Phased Array Radar

Kalim

Erkens

Wunderlich

et al. 2009

2009 German Microwave Conference

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Switching-mode power amplifiers are used in appli-local power density since the input power is divided equally cations where linearity is not critical and efficiency is the utmost into the two transistors to generate the required output power. priority e.g. phased arrays. This paper presents the design of a Low power density is very important for system on chip (SOC) differential class-E amplifier for a phased array radar application in 0.25,m SiGe BiCMOS technology. The operating frequency applications. Therefore, differential topology has been selected range is 2.9 GHz to 3.1 GHz with center frequency at 3GHz. for this design. The design approach of the amplifier which includes damping Radar pulses of a phased array radar are not amplitude circuit, shunt charging capacitor and balun will be described, modulated and thus, it allows to have power amplifiers with Simulations of the design predict an output power and PAE of high efficiency i.e switching-mode power amplifiers. The basic 25.8 dBm and 49 % respectively. The output stage is biased with a 3.3 V at the collector.idea iS to have a nonoverlapping voltage and current waveIndex Terms-SiGe HBTs, phased array radar, switching-forms at the collector of the output transistor. There are two mode power amplifiers (SMPAs), class-E, power added efficiency, configurations suitable for this task: the class-E or class-F power spectrum.amplifier. The class-F amplifier has a better power output capability but the output matching network is complex as it requires the proper harmonic tuning to get the desired RF power amplifiers (PA) are the important and key part output voltage and current waveforms [5]- [6]. On the other of the RF front end in any transmitter. They are used in a hand, class-E amplifier has poor power output capability but wide variety of applications including wireless and satellite much simpler output matching network [7]-[9]. Because of communications, phased array radar, electronic warfare and this reason, class E amplifier is favored. etc. The purpose of a PA is to amplify the input signal In this paper, a highly efficient class-E PA in SiGe based on to a sufficient power level such that the desired signal can differential topology, targeting phased array radar application propagate across some distance and be received at the receiver is demonstrated. The aim is to design a differential class-E end.PA which can deliver 25 dBm output power. The operating Today's most of the research is concentrated on single-frequency range is from 2.9 GHz to 3.1 GHz. ended design implemented in GaN, LDMOS, GaAs MESFET, In the next sections, a class-E amplifier is investigated GaAs HBTs, InP and etc. The compound semiconductor-based followed by single-ended and differential designs and their devices take advantages of their intrinsic material properties simulation results. and offer superior device performance in high-frequency applications such as monolithic millimeter-wave integrated circuits II. THE CLASs-E CONCEPT (MMIC) [1]. However, for low cost, light-weight, h...

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“…Alternatively, post processing can be performed on die by using a specially designed carrier wafer [57]. Post processing on a previously designed power amplifier [58] was performed successfully by J. Wood at the Virginia Polytechnic Institute and State University, Blacksburg.…”

Section: Su-8mentioning

confidence: 99%

Micromachined Millimeter- and Submillimeter-wave Circuits for Test and Integration

Chen¹

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The terahertz spectrum is critical to a wide range of scientific applications, from radio astronomy to remote sensing. However, due to the cost, size and weight of terahertz systems, the terahertz frequency range remains one of the least explored and utilized regions of the electromagnetic spectrum. To reduce the size, weight and cost of terahertz components, one of the solutions is to fabricate high density integrated circuits.Although progress has been made in the development of submillimeter-wave monolithic integrated circuits, the evaluation of these circuits still relies on test fixtures, which makes testing expensive and time consuming. A micromachined on-wafer probe covering frequencies 500-750 GHz has been demonstrated in this work to simplify submillimeterwave integrated circuits testing.This work also presents the design, simulation and measurement of a vertical RF interconnect with mechanical fit for three-dimensional heterogeneous integration, which is one of the major technologies for system miniaturization. The mechanical fit is a flip-chip strategy employing SU-8, an ultra-thick photoresist, to realize interlocking structures that prevent misalignment during assembly and increase the reliability of the interconnects. To determine the electromagnetic characteristics, such as insertion loss and the coupling between face-to-face chips, different test structures were fabricated and measured.To my parents for their long-term encouragement and believing in me.

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A High Linearity 30-GHz Range SiGe Differential Power Amplifier IC

Cited by 4 publications

References 9 publications

Vertical RF Transition with Mechanical Fit for Three-Dimensional Heterogeneous Integration

Vertical RF Transition with Mechanical Fit for Three-Dimensional Heterogeneous Integration

Switching-Mode Differential Class-B Amplifier for Phased Array Radar

Micromachined Millimeter- and Submillimeter-wave Circuits for Test and Integration

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