High-field generation of electron traps and charge trapping in ultra-thin SiO&lt;inf&gt;2&lt;/inf&gt;

Jeng, C.S.; Ranganath, Thanmayi; Huang, Chih‐Ting; Jones, H.S.; Chang, T.T.L.

doi:10.1109/iedm.1981.190095

Cited by 15 publications

(9 citation statements)

References 4 publications

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“…Usually, the external voltage applied to the dielectric capacitor could cause the negative/positive dipole layer whose positive charges locate near the cathode, whereas the negative charges place beneath the anode, which is out of the observation field. In addition, tunnelling current inducing positive charges (or current-generated positive charges), which have been studied abundantly in the SiO 2 gate insulator of the MOS structures since the early 1980s should be another important source 22,23 . It is speculated indirectly from the electric measurements that the positive charges can be generated and even become the overwhelming trapped charges in the SiO 2 film when tunnelling electrons pass through the gate insulator 22,23 .…”

Section: Resultsmentioning

confidence: 99%

“…In addition, tunnelling current inducing positive charges (or current-generated positive charges), which have been studied abundantly in the SiO 2 gate insulator of the MOS structures since the early 1980s should be another important source 22,23 . It is speculated indirectly from the electric measurements that the positive charges can be generated and even become the overwhelming trapped charges in the SiO 2 film when tunnelling electrons pass through the gate insulator 22,23 . Similar behaviour was also observed in high-k stack MOS devices 7,24,25 .…”

Section: Resultsmentioning

confidence: 99%

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In situ electron holography study of charge distribution in high-κ charge-trapping memory

Yao

Huo

et al. 2013

Nat Commun

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Charge-trapping memory with high-k insulator films is a candidate for future memory devices. Many efforts with different indirect methods have been made to confirm the trapping position of the charges, but the reported results in the literatures are contrary, from the bottom to the top of the trapping layers. Here we characterize the local charge distribution in the high-k dielectric stacks under different bias with in situ electron holography. The retrieved phase change induced by external bias strength is visualized with high spatial resolution and the negative charges aggregated on the interface between Al 2 O 3 block layer and HfO 2 trapping layer are confirmed. Moreover, the positive charges are discovered near the interface between HfO 2 and SiO 2 films, which may have an impact on the performance of the chargetrapping memory but were neglected in previous models and theory.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

In situ electron holography study of charge distribution in high-κ charge-trapping memory

Yao

Huo

et al. 2013

Nat Commun

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“…We limited the maximum gate current density to 10 06 A=cm 2 in order to avoid additional stresses. Also, because positive trapped charges are easy to be neutralized by a low reverse bias stress [7], [18], [20], leakage currents with the same polarity as that of the stress voltage were first measured for every measurement, and then the leakage currents of the reverse polarity were measured.…”

Section: Methodsmentioning

confidence: 99%

Correlation of stress-induced leakage current with generated positive trapped charges for ultrathin gate oxide

Lee

Lei

1998

IEEE Trans. Electron Devices

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In this work, the evidence of the stress-induced leakage current related with the stress-generated positive trapped charges is presented and investigated. It is shown that the centroid of the positive trapped charges, which depends on the polarity of the stress current, affects the magnitude of the leakage current. And the trapping density of positive charges, which is determined by the final stress applied on the oxide, determines the final level of the leakage currents.

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“…The degradation process has been called trap generation, since the degraded oxide can trap charges. Many studies of trap generation have shown that the traps generated inside the oxide are neutral, as generated, but quickly become positively charged near the anode and negatively charged near the cathode, due to tunnel charging and discharging from the two interfaces [28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47]. The traps appear to be uniformly distributed throughout the oxide, with more traps being generated locally near asperities at the cathode, the electron injecting interface [47,256,521,561].…”

Section: Oxide Trap Generationmentioning

confidence: 99%

“…Following light stress levels the traps were found to be positively charged near both interfaces and these charges were called anomalous positive charges (APC) [28][29][30]. After higher stress levels it was found that the traps were neutral as generated [31] but became positively charged near the anode and negatively charged near the cathode [32][33][34][35][36][37][38], due to electrons tunneling into and out of the traps [39][40][41][42][43][44][45]. The interface state densities generated at both the substrate-oxide and gate-oxide interfaces were found to be comparable [46] and it was found that the bulk oxide traps were generated randomly and uniformly throughout the oxide [47].…”

Section: Introductionmentioning

confidence: 99%

Oxide Wearout, Breakdown, and Reliability

Dumin

2001

Int. J. Hi. Spe. Ele. Syst.

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The subject of oxide wearout, breakdown, and reliability will be reviewed, largely, from an historical perspective. Five topics will be discussed: oxide breakdown, oxide leakage currents, trap generation, statistics, and reliability. An early model of oxide breakdown, developed by Klein and Solomon, will be described and will be shown to be generally applicable to oxides manufactured today, and to other solid insulators, as well. Both hard and soft breakdowns were included in this model and will be discussed here. The importance of stressinduced-leakage-currents (SILCs) and direct tunneling currents will be discussed in the context of device applications, thinner oxides, and oxide reliability. The diminishing importance of breakdown in ultra thin oxides in ultra small devices will be contrasted with the increasing importance of oxide leakage currents. Trap generation is important in the triggering of breakdown and in the formation of SILCs. Trap generation will be discussed in some detail. Various statistical formulations of oxide breakdown, and how these distributions are related to trap generation, will be discussed. All of these effects will be related to oxide reliability and oxide integrity. An extensive bibliography has been included to help the reader obtain more detailed information concerning the concepts being discussed. Int. J. Hi. Spe. Ele. Syst. 2001.11:617-718. Downloaded from www.worldscientific.com by UNIVERSITY OF VIRGINIA on 04/10/15. For personal use only. Int. J. Hi. Spe. Ele. Syst. 2001.11:617-718. Downloaded from www.worldscientific.com by UNIVERSITY OF VIRGINIA on 04/10/15. For personal use only. Oxide Wearout, Breakdown, and Reliability 619found in an early review paper [20]. This wearout/breakdown model will be referred to as the "Klein/Solomon" model below when comparisons with modern works are needed.The Klein/Solomon model has been refined and confirmed continuously from the 1970s through the present time [10,20,. The extent of the damage is determined both by the 1/2 CV 2 energy stored in the capacitor and by the rate at which this energy discharges through the local hot spot [10,20,75,82,83,88,92,93,96,[100][101][102]. The local hot spot is often accompanied by light emission, in many cases incandescence [8-10, 103-115]. Several techniques have been developed for using the damage introduced during the breakdown to study the breakdown process [80,[116][117][118][119][120][121][122][123][124]. During the breakdown event, the stored energy in the capacitor, 1/2 CV 2 , partially discharges through the breakdown region in a time limited by the impedance of the total measurement system [8][9][10][82][83][84][85].The local breakdowns are intimately coupled to the trap generation and various trap generation models will be discussed in a separate section.During the breakdowns described by Klein/Solomon, one of two scenarios is possible during and following a breakdown discharge. Which scenario takes place depends on the oxide thickness, the oxide area, the magnitude of the stored energy, the ...

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High-field generation of electron traps and charge trapping in ultra-thin SiO<inf>2</inf>

Cited by 15 publications

References 4 publications

In situ electron holography study of charge distribution in high-κ charge-trapping memory

In situ electron holography study of charge distribution in high-κ charge-trapping memory

Correlation of stress-induced leakage current with generated positive trapped charges for ultrathin gate oxide

Oxide Wearout, Breakdown, and Reliability

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