High-Fidelity Rapid Initialization and Read-Out of an Electron Spin via the Single Donor<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msup><mml:mi>D</mml:mi><mml:mo>−</mml:mo></mml:msup></mml:math>Charge State

Watson, Thomas; Weber, Bent; House, Matthew; Büch, Holger; Simmons, M. Y.

doi:10.1103/physrevlett.115.166806

Cited by 55 publications

(71 citation statements)

References 35 publications

(39 reference statements)

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“…As a practical matter, keeping a single SED tuned in gate voltage space to exhibit the desired behavior becomes challenging over the experimental run time. For instance, a technique used in quantum computation known as spin-dependent tunneling is often used to read out the spin state of a single electron after having performed some manipulation [32][33][34]. The technique is illustrated in Figure 2.…”

Section: Experimental Observations Of Charge Offset Driftmentioning

confidence: 99%

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Stability of Single Electron Devices: Charge Offset Drift

Stewart

Zimmerman

2016

Applied Sciences

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Single electron devices (SEDs) afford the opportunity to isolate and manipulate individual electrons. This ability imbues SEDs with potential applications in a wide array of areas from metrology (current and capacitance) to quantum information. Success in each application ultimately requires exceptional performance, uniformity, and stability from SEDs which is currently unavailable. In this review, we discuss a time instability of SEDs that occurs at low frequency ( 1 Hz) called charge offset drift. We review experimental work which shows that charge offset drift is large in metal-based SEDs and absent in Si-SiO 2 -based devices. We discuss the experimental results in the context of glassy relaxation as well as prospects of SED device applications.

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Section: Experimental Observations Of Charge Offset Driftmentioning

confidence: 99%

Section: Experimental Observations Of Charge Offset Driftmentioning

confidence: 99%

Stability of Single Electron Devices: Charge Offset Drift

Stewart

Zimmerman

2016

Applied Sciences

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“…Following from previous works on single-shot spin readout [8][9][10]12,33], the assignment of singlet or triplet state to each readout trace comprises two separate parts, (i) electrical readout and (ii) state-to-charge conversion (STC), which we discuss in detail below.…”

mentioning

confidence: 99%

“…046802 An increased ability to control and manipulate quantum systems is driving the field of quantum computation forward [1][2][3][4]. The spin of a single electron in the solid state has long been utilized in this context [5][6][7][8][9][10][11], providing a superbly clean quantum system with two orthogonal quantum states that can be measured with over 99% fidelity [12]. As a natural next step, the coupling of two electrons at separate sites has been studied in gate-defined quantum dots [5,13,14], as well as in donor systems [15][16][17].…”

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confidence: 99%

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High-Fidelity Single-Shot Singlet-Triplet Readout of Precision-Placed Donors in Silicon

et al. 2017

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In this work we perform direct single-shot readout of the singlet-triplet states in exchange coupled electrons confined to precision-placed donor atoms in silicon. Our method takes advantage of the large energy splitting given by the Pauli-spin blockaded (2,0) triplet states, from which we can achieve a singleshot readout fidelity of 98.4 AE 0.2%. We measure the triplet-minus relaxation time to be of the order 3 s at 2.5 T and observe its predicted decrease as a function of magnetic field, reaching 0.5 s at 1 T. DOI: 10.1103/PhysRevLett.119.046802 An increased ability to control and manipulate quantum systems is driving the field of quantum computation forward [1][2][3][4]. The spin of a single electron in the solid state has long been utilized in this context [5][6][7][8][9][10][11], providing a superbly clean quantum system with two orthogonal quantum states that can be measured with over 99% fidelity [12]. As a natural next step, the coupling of two electrons at separate sites has been studied in gate-defined quantum dots [5,13,14], as well as in donor systems [15][16][17]. In addition to being the eigenstates for two coupled spins, the singlet-triplet (ST) states of two electrons can form a qubit subspace, and have previously been utilized for quantum information processing [6,[18][19][20][21][22]. Unlike in gate-defined quantum dots, donor systems do not require electrodes to confine electrons. The resulting decrease in physical complexity makes donor nanodevices very appealing for scaling up to many electron sites [15].In the (1,1) charge configuration the ST states are eigenstates if the exchange coupling is greater than any difference in Zeeman energy between the two spins. The singlet and three triplet states are split only by the Zeeman energy in the cases of jT þ i ¼ j↑↑i and jT − i ¼ j↓↓i, and an exchange energy, J, for the singlet jSi ¼ ðj↑↓i − j↓↑iÞ= ffiffi ffi 2 p and jT 0 i ¼ ðj↑↓i þ j↓↑iÞ= ffiffi ffi 2 p states. However, in the (2,0) configuration all triplet states split from the singlet jSð2; 0Þi by a larger exchange interaction, Δ ST , measured in previous works to be > 5 meV for donors [23]. The triplet states are therefore blocked from tunneling from the ð1; 1Þ → ð2; 0Þ charge configuration, known as Pauli spin blockade.Typically, direct ST readout is performed by charge discrimination between the (1,1) and (2,0) states below the ST energy splitting Δ ST . However, this relies on the charge sensor having a large enough differential capacitive coupling to each dot to discriminate between the two charge states. This is not possible in some architectures due to symmetry constraints, in particular, for donors it is advantageous for multiple donor sites to be coupled equally to a charge sensor for independent readout and/or loading. The tightly confined electron wave function at each donor site therefore necessitates that they are equidistant from the charge sensor. As a consequence ð1; 1Þ ↔ ð2; 0Þ charge transfer signals are often too small to detect directly in this architecture.Until now s...

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Atom‐by‐Atom Fabrication of Single and Few Dopant Quantum Devices

Wyrick

Wang

Kashid

et al. 2019

Adv Funct Materials

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Atomically precise fabrication has an important role to play in developing atom-based electronic devices for use in quantum information processing, quantum materials research, and quantum sensing. Atom-by-atom fabrication has the potential to enable precise control over tunnel coupling, exchange coupling, on-site charging energies, and other key properties of basic devices needed for solid state quantum computing and analog quantum simulation. Using hydrogen-based scanning probe lithography, individual dopant atoms are deterministically placed relative to atomically aligned contacts and gates to build single electron transistors, single atom transistors, and gate-controlled quantum sensing devices. The key steps required to fabricate and demonstrate the essential building blocks needed for spin selective initialization/readout, and coherent quantum manipulation are described.

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High-Fidelity Rapid Initialization and Read-Out of an Electron Spin via the Single DonorD−Charge State

Cited by 55 publications

References 35 publications

Stability of Single Electron Devices: Charge Offset Drift

Stability of Single Electron Devices: Charge Offset Drift

High-Fidelity Single-Shot Singlet-Triplet Readout of Precision-Placed Donors in Silicon

Atom‐by‐Atom Fabrication of Single and Few Dopant Quantum Devices

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