High-exposure-durability, high-quantum-efficiency (&gt;90%) backside-illuminated soft-X-ray CMOS sensor

Harada, Tetsuo; Teranishi, Nobukazu; Watanabe, Takeo; Zhou, Quan; Bogaerts, Jan; Wang, Xinyang

doi:10.7567/1882-0786/ab5b5e

Cited by 27 publications

(18 citation statements)

References 33 publications

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“…On a short-term perspective, with a complete integration of the camera in the data acquisition system of FERMI, even an additional gain is expected in the data acquisition time and, by cooling the camera to the lowest temperature, an even better signal-to-noise ratio can be obtained. Furthermore, the new generation of GSENSE400 sensors (Harada et al, 2020; https///www.gpixel.com) could be easily integrated without any development to increase the efficiency at FERMI FEL working energies or to protect the chip from radiation effect.…”

Section: Discussionmentioning

confidence: 99%

“…As reported by Desjardins et al (2020), the sensor has a maximum quantum efficiency (QE) around an energy of 1000 eV and a poor efficiency for lower beam energies (due to the surface antireflection protective coating). Compared to the prototype noncoated version, GSENSE400BSI-GP, or the latest version introduced recently by GPIXEL, GSENSE400BSI-Pulser (Harada et al, 2020; https://www.gpixel.com), the efficiency of GSENSE400BSI-TVSIB is only 20% around 50 eV. Despite these unfavourable detection conditions, the AXIS-SXR camera was installed in the 5 Â 10 À7 mbar vacuum experimental chamber of the DiProi end-station at FERMI for a first proof-of-principle pump-probe XUV experiment [Fig.…”

Section: Methodsmentioning

confidence: 99%

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Single-shot experiments at the soft X-FEL FERMI using a back-side-illuminated scientific CMOS detector

Léveillé¹,

Desjardins²,

Popescu³

et al. 2022

J Synchrotron Radiat

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The latest Complementary Metal Oxide Semiconductor (CMOS) 2D sensors now rival the performance of state-of-the-art photon detectors for optical application, combining a high-frame-rate speed with a wide dynamic range. While the advent of high-repetition-rate hard X-ray free-electron lasers (FELs) has boosted the development of complex large-area fast CCD detectors in the extreme ultraviolet (EUV) and soft X-ray domains, scientists lacked such high-performance 2D detectors, principally due to the very poor efficiency limited by the sensor processing. Recently, a new generation of large back-side-illuminated scientific CMOS sensors (CMOS-BSI) has been developed and commercialized. One of these cost-efficient and competitive sensors, the GSENSE400BSI, has been implemented and characterized, and the proof of concept has been carried out at a synchrotron or laser-based X-ray source. In this article, we explore the feasibility of single-shot ultra-fast experiments at FEL sources operating in the EUV/soft X-ray regime with an AXIS-SXR camera equipped with the GSENSE400BSI-TVISB sensor. We illustrate the detector capabilities by performing a soft X-ray magnetic scattering experiment at the DiProi end-station of the FERMI FEL. These measurements show the possibility of integrating this camera for collecting single-shot images at the 50 Hz operation mode of FERMI with a cropped image size of 700 × 700 pixels. The efficiency of the sensor at a working photon energy of 58 eV and the linearity over the large FEL intensity have been verified. Moreover, on-the-fly time-resolved single-shot X-ray resonant magnetic scattering imaging from prototype Co/Pt multilayer films has been carried out with a time collection gain of 30 compared to the classical start-and-stop acquisition method performed with the conventional CCD-BSI detector available at the end-station.

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Section: Discussionmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Single-shot experiments at the soft X-FEL FERMI using a back-side-illuminated scientific CMOS detector

Léveillé¹,

Desjardins²,

Popescu³

et al. 2022

J Synchrotron Radiat

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“…The employed laboratory setup was consisting of a low power X‐ray tube (XOS flex beam 50 W microfocus Xray tube with a Rh target), a sample holder and an pnCCD (p‐njunction charge coupled device) [ 41 ] as the detector. Here, the pnCCD provided simultaneous position‐ and energy‐dispersive detection of X‐rays at much higher read‐out rates as compared to conventional CCD detectors, but the experiment would also be possible employing CCD or even CMOS based [ 49 ] 2D detectors.…”

Section: Methodsmentioning

confidence: 99%

Simultaneous Dimensional and Analytical Characterization of Ordered Nanostructures

Hönicke

Kayser

Nikolaev

et al. 2021

Small

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The spatial and compositional complexity of 3D structures employed in today's nanotechnologies has developed to a level at which the requirements for process development and control can no longer fully be met by existing metrology techniques. For instance, buried parts in stratified nanostructures, which are often crucial for device functionality, can only be probed in a destructive manner in few locations as many existing nondestructive techniques only probe the objects surfaces. Here, it is demonstrated that grazing exit X‐ray fluorescence can simultaneously characterize an ensemble of regularly ordered nanostructures simultaneously with respect to their dimensional properties and their elemental composition. This technique is nondestructive and compatible to typically sized test fields, allowing the same array of structures to be studied by other techniques. For crucial parameters, the technique provides sub‐nm discrimination capabilities and it does not require access‐limited large‐scale research facilities as it is compatible to laboratory‐scale instrumentation.

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“…Lastly, a new GSENSE400BSI sensor version with a thicker Epi-Si and a highly efficient process has been tested by Harada at the NewSUBARU synchrotron facility (Harada et al, 2020). It assures a very good efficiency (>80%) over a very large soft X-ray range and it will soon be commercially available from GPIXEL.…”

Section: Summary and Perspectivesmentioning

confidence: 99%

Backside-illuminated scientific CMOS detector for soft X-ray resonant scattering and ptychography

Desjardins¹,

Medjoubi²,

Sacchi³

et al. 2020

J Synchrotron Rad

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The impressive progress in the performance of synchrotron radiation sources is nowadays driven by the so-called `ultimate storage ring' projects which promise an unprecedented improvement in brightness. Progress on the detector side has not always been at the same pace, especially as far as soft X-ray 2D detectors are concerned. While the most commonly used detectors are still based on microchannel plates or CCD technology, recent developments of CMOS (complementary metal oxide semiconductor)-type detectors will play an ever more important role as 2D detectors in the soft X-ray range. This paper describes the capabilities and performance of a camera equipped with a newly commercialized backside-illuminated scientific CMOS (sCMOS-BSI) sensor, integrated in a vacuum environment, for soft X-ray experiments at synchrotron sources. The 4 Mpixel sensor reaches a frame rate of up to 48 frames s−1 while matching the requirements for X-ray experiments in terms of high-intensity linearity (>98%), good spatial homogeneity (<1%), high charge capacity (up to 80 ke−), and low readout noise (down to 2 e− r.m.s.) and dark current (3 e− per second per pixel). Performance evaluations in the soft X-ray range have been carried out at the METROLOGIE beamline of the SOLEIL synchrotron. The quantum efficiency, spatial resolution (24 line-pairs mm−1), energy resolution (<100 eV) and radiation damage versus the X-ray dose (<600 Gy) have been measured in the energy range from 40 to 2000 eV. In order to illustrate the capabilities of this new sCMOS-BSI sensor, several experiments have been performed at the SEXTANTS and HERMES soft X-ray beamlines of the SOLEIL synchrotron: acquisition of a coherent diffraction pattern from a pinhole at 186 eV, a scattering experiment from a nanostructured Co/Cu multilayer at 767 eV and ptychographic imaging in transmission at 706 eV.

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High-exposure-durability, high-quantum-efficiency (>90%) backside-illuminated soft-X-ray CMOS sensor

Cited by 27 publications

References 33 publications

Single-shot experiments at the soft X-FEL FERMI using a back-side-illuminated scientific CMOS detector

Single-shot experiments at the soft X-FEL FERMI using a back-side-illuminated scientific CMOS detector

Simultaneous Dimensional and Analytical Characterization of Ordered Nanostructures

Backside-illuminated scientific CMOS detector for soft X-ray resonant scattering and ptychography

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