High‐energy storage density and excellent temperature stability in antiferroelectric/ferroelectric bilayer thin films

Abstract

The antiferroelectric/ferroelectric (PbZrO 3 /PbZr 0.52 Ti 0.48 O 3 ) bilayer thin films were fabricated on a Pt(111)/Ti/SiO 2 /Si substrate using sol-gel method. PbZr 0.52 Ti 0.48 O 3 layer acts as a buffered layer and template for the crystallization of PbZrO 3 layer. The PbZrO 3 layer with improved quality can share the external voltage due to its smaller dielectric constant and thinner thickness, resulting in the enhancements of electric field strength and energy storage density for the PbZrO 3 / PbZr 0.52 Ti 0.48 O 3 bilayer thin film. The greatly improved electric breakdown strength value of 2615 kV/cm has been obtained, which is more than twice the value of individual PbZr 0.52 Ti 0.48 O 3 film. The enhanced energy storage density of 28.2 J/cm 3 at 2410 kV/cm has been achieved in PbZrO 3 /PbZr 0.52 Ti 0.48 O 3 bilayer film at 20°C, which is higher than that of individual PbZr 0.52 Ti 0.48 O 3 film (15.6 J/cm 3 ). Meanwhile, the energy storage density and efficiency of PbZrO 3 / PbZr 0.52 Ti 0.48 O 3 bilayer film increase slightly with the increasing temperature from 20°C to 120°C. Our results indicate that the design of antiferroelectric/ferroelectric bilayer films may be an effective way for developing high power energy storage density capacitors with high-temperature stability.

High‐recoverable energy‐storage density and dielectric tunability in Eu3+‐doped NBT‐xSTO binary solid solution films

“…Due to the higher breakdown strength, Eu-NBT-0.3STO thin film has a high W r of 31.5 J cm −3 and η of 64% under an applied field of 2.2 MV cm −1 (see Table 1). These results are comparable to the recently reported values of lead-based thin films prepared on Pt/Ti/SiO 2 /Si substrates and some other binary solid solution films, [43][44][45][46][47][48] as shown in Figure 10B.…”

“…A, W r and η for Eu‐NBT‐ x STO ( x = 0.24, 0.3, 0.4) films under various electric fields; (B) W r and η for Pb 0.9 La 0.1 (Zr 0.52 Ti 0.48 )O 3 (PLZT‐1), Pb 0.91 La 0.09 (Ti 0.65 Zr 0.35 )O 3 (PLZT‐2), PbZrO 3 /PbZr 0.52 Ti 0.48 O 3 (PZ/PZT) multilayer, 0.94Na 0.5 Bi 0.5 TiO 3 ‐0.06BaTiO 3 (NBT‐BT), Mn‐doped NaNbO 3 ‐0.04CaZrO 3 (Mn‐NN‐CZ), Ba(Zr 0.2 Ti 0.8 )O 3 (BZT), and Eu‐NBT‐0.3STO (This work) thin film [Color figure can be viewed at wileyonlinelibrary.com]…”

High Energy Storage Performance of Opposite Double‐Heterojunction Ferroelectricity–Insulators

“…In order to further enhance the energy storage density of thin films capacitors, some effective methods have been employed to improve the breakdown strength E BDS value, such as doping effect, interface engineering, stress engineering . The greatly improved E BDS (2615 kV cm −1 ) is observed in PbZrO 3 /PbZr 0.52 Ti 0.48 O 3 bilayer films . The electric breakdown strength (4700 kV cm −1 ) has been significantly improved by increasing the number of interfaces in the Ba 0.7 Ca 0.3 TiO 3 /BaZr 0.2 Ti 0.8 O 3 multilayer films systems, which effectively impedes the spread and growth of the electric trees .…”

Structure variation and energy storage properties of acceptor‐modified PBLZST antiferroelectric ceramics

“…There are secondary phases of Pb 3 Mn 6 O 13 (JCPDS 33‐0765) and Mn 3 O 4 (JCPDS 01‐1127) in S3 because of the superfluous Mn 2 O 3 addition. Upon the addition of Mn, the (110) peak shifts to high angles and then to a low angle in Figure B, indicating that Mn ions have diffused into the PBLZST lattices . Since the sintering temperature is above 1200°C in this study and the valence state of Mn is uncontrolled in air, Mn 2+ , Mn 3+ , and Mn 4+ may coexist .…”