High-energy heavy-ion induced physical and surface-chemical modifications in polycrystalline cadmium sulfide thin films

Band gap engineering in PbS nanostructured thin films from near-infrared down to visible range by in situ Cd-doping

“…For a comprehensive understanding of the modifications in the electronic structure of PbS, the high-resolution spectra of principal core levels were analyzed by using a XPS Peak Fitting Program. The detailed procedure of fitting the peaks can be found in an earlier paper [15]. Experimental high-resolution spectra of Pb 4f 7/2 , Cd 3d 5/2 and S 2p core levels along with their resolved components are shown in Fig.…”

Pulsed laser deposited InGaZnO thin film on silica glass

“…4 that In 3d 5/2 , Ga 2p 3/2 , and Zn 2p 3/2 center peaks shift gradually to higher energy side with increasing oxygen pressure, and all the changes is less than 1 eV. This small change may be ascribed to the decrease in valence electron density, an increase in oxidation state, and/or a Fermi level shift in the band gap due to irradiation [23][24][25]. The atomic ratio of the film was further calculated.…”

The thermoluminescence properties of CdS films under nitrogen atmosphere

“…The dislocation density is a measure of the quantity of the dislocation present in a material and in the order of 10 10 m À 2 in a metal. The dislocation density and the strain on the surface of the films are well explained in the literature [9,17,22,[47][48][49]. The crystal size increases with increase in annealing temperature, which results in decrease in the defects like dislocation density and strain in the film (Table 1).…”