2010
DOI: 10.1016/j.jallcom.2010.01.135
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Band gap engineering in PbS nanostructured thin films from near-infrared down to visible range by in situ Cd-doping

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Cited by 76 publications
(41 citation statements)
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“…The band gap at annealing temperature 300 • C was found to be 2.67 eV, which is very close to that of bulk ZnSe (2.70 eV) [24]. The increase in energy band gap from 2.60 to 2.67 eV may be related with the existence of high-density levels within the band gap [25] and the structural changes causing quantum confinement effects in the ZnSe films with annealing temperature [21][22][23]. The calculated values of band gap are in good agreement with that of the films deposited by vacuum evaporation (2.63-2.64 eV) [9], screen-printing (2.66 eV) [26] and two-source evaporation (2.68 eV) [27] methods.…”
Section: Optical Propertiesmentioning
confidence: 56%
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“…The band gap at annealing temperature 300 • C was found to be 2.67 eV, which is very close to that of bulk ZnSe (2.70 eV) [24]. The increase in energy band gap from 2.60 to 2.67 eV may be related with the existence of high-density levels within the band gap [25] and the structural changes causing quantum confinement effects in the ZnSe films with annealing temperature [21][22][23]. The calculated values of band gap are in good agreement with that of the films deposited by vacuum evaporation (2.63-2.64 eV) [9], screen-printing (2.66 eV) [26] and two-source evaporation (2.68 eV) [27] methods.…”
Section: Optical Propertiesmentioning
confidence: 56%
“…The films annealed at 100 and 200 • C show less transmittance at shorter wavelengths, whereas film annealed at 300 • C revealed higher transmittance. The variation in absorption edge most probably due to the improvement in structural order, removal of residual stresses and quantum confinement effects [21][22][23]. The films showed blue shift with the increase of annealing temperature, which indicates that absorption edge shifting towards bulk ZnSe.…”
Section: Optical Propertiesmentioning
confidence: 97%
“…There have been several studies on Cd-substituted PbS thin films [12,18]. Depending on the content of Cd content, different crystal structure and optical properties were reported since CdS has a hexagonal wurzite structure compared to the cubic structure of PbS [12]. Cu is considered as a promising doping element because d-orbitals of Cu provide deep acceptor states in metal sulfides [19].…”
Section: A N U S C R I P Tmentioning
confidence: 99%
“…5 eV required for achieving a most efficient solar cell [8], likewise sizedependent new physical aspects have generated an ongoing thrust for new practical applications, and PbS nanocrystals with grain-size (GS) dimensions in the range 1-20 nm are of technological interest for advanced optoelectronic applications, showing a stronger quantum confinement effect when the crystallite size matches the dimension of Bohr exciton [9]. In this context, there are two situations called the weak confinement and the strong regimes [10]. In the weak regime the particle radius of the electron-hole pair, but the range of motion of the exciton, is limited, which causes a blue shift in the absorption spectrum.…”
Section: Introductionmentioning
confidence: 99%