High Electron Mobility Transistor: Physics-Based TCAD Simulation and Performance Analysis

Biswas, Kalyan; Ghoshhajra, Rachita; Sarkar, Angsuman

doi:10.1007/978-981-19-2165-0_12

Cited by 2 publications

(1 citation statement)

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“…The basic principle of HEMTs is the formation of a heterojunction by two semiconductors at different bandgaps.The concentration of two dimensional electron gas (2DEG) can be controlled by doping the Al x Ga 1−x N layer and Al content [9,10]. The performance enhancement of AlGaN/GaN heterostructures can be accomplished with high carrier sheet concentration (10 13 cm −2 ) beyond those possible in other III-V material systems by a significant margin [11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Improved electrical characteristics of AlxGa1−xN/GaN High Electron Mobility Transistor by effect of physical and geometrical parameters

Douara,

Rabehi,

Baitiche

et al. 2023

Rev. Mex. Fís.

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This research aims to study the impact of some physical and structural parameters on the I–V characteristics of a high electron mobility transistors (HEMTs) based on AlxGa1-x N/GaN, we investigate the effect of the GaN buffer layer thickness and the impact of other properties of the materials such as aluminum mole fraction and doping concentration, the Al0.2Ga0.8 N/GaN heterostructures with 400 nm of buffer layer and a layer doped with n = 4 x 1018 cm-3 , for this structure we find the maximum saturation current of 420 mA/mm . The proposed model included GaN buffer layer and Al content were derived from our developed I-V characteristics. The proposed model is in excellent agreement with the simulated I-V characteristics and experimental results.

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