High electron mobility transistor based on a GaN-AlxGa1−xN heterojunction

Abstract

In this letter we report the fabrication and dc characterization of a high electron mobility transistor (HEMT) based on a n-GaN-Al0.14Ga0.86N heterojunction. The conduction in our low pressure metalorganic chemical vapor deposited heterostructure is dominated by two-dimensional electron gas at the heterostructure interface. HEMT devices were fabricated on ion-implant isolated mesas using Ti/Au for the source drain ohmic and TiW for the gate Schottky. For a device with a 4 μm gate length (10 μm channel opening, i.e., source-drain separation), a transconductance of 28 mS/mm at 300 K and 46 mS/mm at 77 K was obtained at +0.5 V gate bias. Complete pinchoff was observed for a −6 V gate bias.

p-type conductivity in silicon nanowires induced by heterojunction interface charge transfer

“…10 The charge transfer process is a widely recognized phenomenon in organic and inorganic thin film interfaces with appropriate band energy alignment. [11][12][13] However, its influence on the properties of 1D nanostructures has not been well studied. Thus far, in 1D nanostructures it has only been revealed that F4-TCNQ coating is effective in reducing the contact and channel resistance in carbon nanotube transistors.…”

A review of InP/InAlAs/InGaAs based transistors for high frequency applications

“…The HEMTs uses the concept of bandgap engineering and it shows outstanding electron transport characteristics of two dimensional electron gas systems in III-V compound semiconductors. Over the last three decades, HEMTs have been demonstrated in several material systems such as AlGaAs/GaAs, AlGaN/GaN [203,204] and InAlAs/InGaAs [205,206]. HEMTs are mainly available in three flavors-pseudomorphic HEMT (pHEMT), Fig.…”

Synthesis of single hexagonal-phase AlN nanocrystallines by a liquid-solid metathetical reaction in an organic solution

“…All of these make it a strong candidate for high power and high temperature electronic applications such as electric substrates [1] , heat sinks, laser heat spreaders [2] and field-effect transistors [3] . Its ternary systems consisting of InN and GaN can be designed from 1.9 eV to 6.2 eV, which is suitable for electroluminescence devices operating at wavelengths from orange to ultraviolet.…”