p-type conductivity in silicon nanowires induced by heterojunction interface charge transfer

Yuan, Guodong; Ng, Tsz‐Wai; Zhou, Yong; Wang, F.; Zhang, Wenjun; Tang, Yongbing; Wang, H. B.; Luo, Lin‐Bao; Wang, P. F.; Bello, I.; Lee, C. S.; Lee, S. T.

doi:10.1063/1.3501122

Cited by 22 publications

(12 citation statements)

References 25 publications

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“…Accumulation and depletion of electrons in MoS 2 by SCTD resulted in the shift of peak position as well as the change in emission intensity. − SCTD on the 2D materials of graphene and MoS 2 revealed that the influence depth of surface dopants in the perpendicular direction was ca. 1.5 nm, corresponding to 2–4 layers of the 2D materials. − Although the SCTD scheme has been demonstrated to be effective for 2D materials, little work has been implemented for other low-dimensional nanostructures such as semiconductor nanowires (NWs) − and nanoribbons (NRs), presumably due to the relatively large diameter/thickness of these nanostructures.…”

supporting

confidence: 90%

Surface Charge Transfer Doping via Transition Metal Oxides for Efficient p-Type Doping of II–VI Nanostructures

Xia

Shao

et al. 2016

ACS Nano

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Wide band gap II-VI nanostructures are important building blocks for new-generation electronic and optoelectronic devices. However, the difficulty of realizing p-type conductivity in these materials via conventional doping methods has severely handicapped the fabrication of p-n homojunctions and complementary circuits, which are the fundamental components for high-performance devices. Herein, by using first-principles density functional theory calculations, we demonstrated a simple yet efficient way to achieve controlled p-type doping on II-VI nanostructures via surface charge transfer doping (SCTD) using high work function transition metal oxides such as MoO, WO, CrO, and VO as dopants. Our calculations revealed that these oxides were capable of drawing electrons from II-VI nanostructures, leading to accumulation of positive charges (holes injection) in the II-VI nanostructures. As a result, Fermi levels of the II-VI nanostructures were shifted toward the valence band regions after surface modifications, along with the large enhancement of work functions. In situ ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy characterizations verified the significant interfacial charge transfer between II-VI nanostructures and surface dopants. Both theoretical calculations and electrical transfer measurements on the II-VI nanostructure-based field-effect transistors clearly showed the p-type conductivity of the nanostructures after surface modifications. Strikingly, II-VI nanowires could undergo semiconductor-to-metal transition by further increasing the SCTD level. SCTD offers the possibility to create a variety of electronic and optoelectronic devices from the II-VI nanostructures via realization of complementary doping.

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supporting

confidence: 90%

Surface Charge Transfer Doping via Transition Metal Oxides for Efficient p-Type Doping of II–VI Nanostructures

Xia

Shao

et al. 2016

ACS Nano

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Section: Sctd In 1d Nanostructuresmentioning

confidence: 99%

“…To this end, solid organic or inorganic molecules with appropriate band energy levels are promising candidates. It has been reported that stable p‐type SCTD in Si NWs can be achieved via surface coating with F4‐TCNQ or MoO 3 thin films, while an n‐type SCTD of Si NWs has been realized by the adsorption of organic cobaltocene (CoCp 2 *) molecules . Besides electrical characterization, the Si core‐level shift in photoelectron spectroscopy also revealed the efficient doping process induced by interfacial charge transfer.…”

Section: Sctd In 1d Nanostructuresmentioning

confidence: 99%

Surface Charge Transfer Doping of Low‐Dimensional Nanostructures toward High‐Performance Nanodevices

Zhang¹,

Shao²,

He³

et al. 2016

Advanced Materials

163

139

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Device applications of low-dimensional semiconductor nanostructures rely on the ability to rationally tune their electronic properties. However, the conventional doping method by introducing impurities into the nanostructures suffers from the low efficiency, poor reliability, and damage to the host lattices. Alternatively, surface charge transfer doping (SCTD) is emerging as a simple yet efficient technique to achieve reliable doping in a nondestructive manner, which can modulate the carrier concentration by injecting or extracting the carrier charges between the surface dopant and semiconductor due to the work-function difference. SCTD is particularly useful for low-dimensional nanostructures that possess high surface area and single-crystalline structure. The high reproducibility, as well as the high spatial selectivity, makes SCTD a promising technique to construct high-performance nanodevices based on low-dimensional nanostructures. Here, recent advances of SCTD are summarized systematically and critically, focusing on its potential applications in one- and two-dimensional nanostructures. Mechanisms as well as characterization techniques for the surface charge transfer are analyzed. We also highlight the progress in the construction of novel nanoelectronic and nano-optoelectronic devices via SCTD. Finally, the challenges and future research opportunities of the SCTD method are prospected.

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“…MoO x is also widely used to deplete surface layer in several kinds of materials such as intrinsic Si nanowires (SiNWs), SrTiO 3 or cubic boron nitride by interfacial charge transfer . Inversion layer, which is usually generated when the work function between semiconductor and contact layer has a large difference, have also been observed in MoO x /n‐Si heterocontact solar cell in recent research works .…”

Section: Introductionmentioning

confidence: 99%

Investigation of MoO_x/n‐Si strong inversion layer interfaces via dopant‐free heterocontact

Sun

Wang

Liu

et al. 2017

Physica Rapid Research Ltrs

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Transition metal oxides (TMOs)/silicon (Si) heterocontact solar cells are currently under intensive investigation due to their simple fabrication process and less parasitic light absorption compared to traditional heterocontact counterparts. Effective segregation of carriers which is related to carrier‐selective heterocontact is crucial for the performance of photovoltaic devices. Molybdenum oxide (MoOx, x ≤ 3), with a wide bandgap of ∼3.24 eV as well as defect bands derived from oxygen vacancies located inside the band gap, has been introduced to integrate with n‐type Si (n‐Si) as hole selective contact. Here, we utilize a stepwise in situ deposition of MoOx to investigate its interaction with Si by X‐ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) measurements. A strong inversion layer originating from a charge transfer process is demonstrated in the n‐Si surface region upon MoOx contact characterized by XPS, UPS, capacitance–voltage (C–V), and minority charge carrier lifetime mapping measurements. A dopant‐free heterocontact is built within n‐Si with a high built‐in potential (Vbi) of ∼0.80 V which benefits for acquiring a high open circuit voltage (Voc). These results give a detailed interpretation on the carrier transport mechanism of MoOx/n‐Si heterocontact and also pave a new route toward fabricating high efficiency, low‐cost solar cells.

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p-type conductivity in silicon nanowires induced by heterojunction interface charge transfer

Cited by 22 publications

References 25 publications

Surface Charge Transfer Doping via Transition Metal Oxides for Efficient p-Type Doping of II–VI Nanostructures

Surface Charge Transfer Doping via Transition Metal Oxides for Efficient p-Type Doping of II–VI Nanostructures

Surface Charge Transfer Doping of Low‐Dimensional Nanostructures toward High‐Performance Nanodevices

Investigation of MoO_x/n‐Si strong inversion layer interfaces via dopant‐free heterocontact

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p-type conductivity in silicon nanowires induced by heterojunction interface charge transfer

Cited by 22 publications

References 25 publications

Surface Charge Transfer Doping via Transition Metal Oxides for Efficient p-Type Doping of II–VI Nanostructures

Surface Charge Transfer Doping via Transition Metal Oxides for Efficient p-Type Doping of II–VI Nanostructures

Surface Charge Transfer Doping of Low‐Dimensional Nanostructures toward High‐Performance Nanodevices

Investigation of MoOx/n‐Si strong inversion layer interfaces via dopant‐free heterocontact

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Investigation of MoO_x/n‐Si strong inversion layer interfaces via dopant‐free heterocontact